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IXYS Corporation
IXYS Corporation

IXFP16N50P Datasheet Preview

IXFP16N50P Datasheet

Polar MOSFETs

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IXFP16N50P pdf
Advance Technical Information
PolarHVTM
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HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFA 16N50P
IXFP 16N50P
IXFH 16N50P
VDSS =
ID25 =
=RDS(on)
trr =
500 V
16 A
400 m
200 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
500 V
500 V
±30 V
±40 V
16 A
35 A
16 A
25 mJ
750 mJ
dv/dt
PD
TJ
TJM
Tstg
TL
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
10 V/ns
300
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
Md
Mounting torque (TO-247 & TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
TO-247
4g
3g
5.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 1 mA
3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
400 m
TO-220 (IXTP)
G DS
TO-263 (IXTA)
(TAB)
G
S
TO-247 (IXFH)
(TAB)
G
DS
D (TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99357A(03/05)



IXYS Corporation
IXYS Corporation

IXFP16N50P Datasheet Preview

IXFP16N50P Datasheet

Polar MOSFETs

No Preview Available !

IXFP16N50P pdf
IXFH 16N50P IXFA 16N50P
IXFP 16N50P
Symbowl ww.DaTtaeSshteCeot4nUd.citoimons
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
gfs
VDS= 20 V; ID = 0.5 ID25, pulse test
8 16
S
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
2250
240
12
pF
pF
pF
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 18 (External)
23 ns
25 ns
70 ns
22 ns
Qg(on)
Qgs
Qgd
RthJC
RthCK
RthCK
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-220)
(TO-247)
43
15
12
0.25
0.21
nC
nC
nC
0.42 K/W
K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
16 A
35 A
1.5 V
trr IF = 16 A, -di/dt = 100 A/µs
IRM VR = 100 V
QRM
130 200 ns
6A
0.6 µC
TO-263 (IXTA) Outline
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
TO-220 (IXTP) Outline
TO-247 AD Outline
Dim. Millimeter
Min. Max.
A
A1
A2
123b
b1
b2
C
D
E
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXFP16N50P
Description Polar MOSFETs
Maker IXYS Corporation
Total Page 4 Pages
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