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IXYS Corporation
IXYS Corporation

IXTA130N10T7 Datasheet Preview

IXTA130N10T7 Datasheet

Power MOSFET

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IXTA130N10T7 pdf
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA130N10T7
VDSS =
ID25 =
RDS(on)
100V
130A
9.1mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
T
SOLD
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
© 2008 IXYS CORPORATION, All rights reserved
Maximum Ratings
100
100
V
V
± 20 V
130 A
120 A
350 A
65 A
400 mJ
360 W
-55 ... +175
175
-55 ... +175
300
260
3
°C
°C
°C
°C
°C
g
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA
5 μA
250 μA
9.1 mΩ
TO-263 (7-lead) (IXTA..7)
1
7
(TAB)
Pins: 1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175°C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
DS99707A(07/08)



IXYS Corporation
IXYS Corporation

IXTA130N10T7 Datasheet Preview

IXTA130N10T7 Datasheet

Power MOSFET

No Preview Available !

IXTA130N10T7 pdf
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 20V, ID = 25A
RG = 5Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 25
RthJC
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS VGS = 0V
ISM Repetitive, Pulse width limited by TJM
VSD IF = 25A, VGS = 0V, Note 1
trr IF = 25A, VGS = 0V
IRM -di/dt = 100A/μs
QRM
VR = 50V
Characteristic Values
Min. Typ. Max.
55 93
S
5080
635
95
pF
pF
pF
30 ns
47 ns
44 ns
28 ns
104 nC
30 nC
29 nC
0.42 °C/W
Characteristic Values
Min. Typ. Max.
130 A
350 A
1.0 V
67 ns
4.7 A
160 nC
IXTA130N10T7
TO-263 (7-lead) (IXTA..7) Outline
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXTA130N10T7
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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