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IXYS Corporation
IXYS Corporation

IXTA152N085T7 Datasheet Preview

IXTA152N085T7 Datasheet

Power MOSFET

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IXTA152N085T7 pdf
Preliminary Technical Information
TrenchMVTM
IXTA152N085T7
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
85
152
7.0
V
A
m
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 175° C, RG = 5
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
85 V
85 V
± 20
152
120
410
25
750
3
V
A
A
A
A
mJ
V/ns
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
360
-55 ... +175
175
-55 ... +175
300
260
3
W Features
°C
°C
°C
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
°C - easy to drive and to protect
°C 175 ° C Operating Temperature
g Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
5.5 7.0 m
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99698 (11/06)



IXYS Corporation
IXYS Corporation

IXTA152N085T7 Datasheet Preview

IXTA152N085T7 Datasheet

Power MOSFET

No Preview Available !

IXTA152N085T7 pdf
IXTA152N085T7
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
gfs VDS= 10 V; ID = 60 A, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on) Resistive Switching Times
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
td(off) RG = 5 (External)
tf
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/µs
VR = 40 V, VGS = 0 V
Characteristic Values
Min. Typ. Max.
60 100
S
5500
720
150
pF
pF
pF
30 ns
50 ns
50 ns
45 ns
114 nC
30 nC
35 nC
0.42 °C/W
TO-263 (7-lead) (IXTA...7) Outline
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Characteristic Values
Min. Typ. Max.
152 A
410 A
1.0 V
90 ns
Notes: 1. Pulse test, t 300 µs, duty cycle d 2 %.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2
6,710,405B2 6,759,692 7,063,975 B2
6,710,463
6771478 B2 7,071,537


Part Number IXTA152N085T7
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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