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IXYS Corporation
IXYS Corporation

IXTP55N075T Datasheet Preview

IXTP55N075T Datasheet

Power MOSFET

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IXTP55N075T pdf
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTP55N075T
IXTY55N075T
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 75
ID25 = 55
RDS(on) 19.5
V
A
mΩ
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
IL
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Package Current Limit, RMS
TO-252
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 175°C, RG =18 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
75 V
75 V
± 20 V
55 A
25 A
150 A
10 A
250 mJ
3 V/ns
130 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
TO-220
TO-252
3g
0.35 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 25 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 100 nA
1 μA
100 μA
19.5 mΩ
GD S
TO-252 (IXTY)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99631 (11/06)



IXYS Corporation
IXYS Corporation

IXTP55N075T Datasheet Preview

IXTP55N075T Datasheet

Power MOSFET

No Preview Available !

IXTP55N075T pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS= 10 V; ID = 0.5 ID25, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
RG = 18 Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A
RthJC
RthCS
TO-220
IXTP55N075T
IXTY55N075T
Characteristic Values
Min. Typ. Max.
16 27
S
1400
235
123
pF
pF
pF
20 ns
50 ns
44 ns
41 ns
33 nC
10 nC
9 nC
1.15 °C/W
0.5 °C/W
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Source-Drain Diode
Symbol
Values
Test Conditions
TJ = 25°C unless otherwise specified)
IS VGS = 0 V
ISM Repetitive
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/μs
VR = 40 V, VGS = 0 V
Characteristic
Min. Typ.
Max.
55
A
150 A Notes:
1.2 V 1. Pulse test: t 300 μs, duty cycle
d 2 %;
50 ns 2. On through-hole packages, RDS(on)
Kelvin test contact location must be
5 mm or less from the package body.
TO-252 (IXTY) Outline
1 Anode
2 NC
3 Anode
4 Cathode
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13
0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
PRELIMINARYTECHNICAL
INFORMATION
The product presented herein is under
development. The Technical Specifica-
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537


Part Number IXTP55N075T
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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