http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





IXYS Corporation
IXYS Corporation

IXTQ220N075T Datasheet Preview

IXTQ220N075T Datasheet

Power MOSFET

No Preview Available !

IXTQ220N075T pdf
Preliminary Technical Information
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH220N075T
IXTQ220N075T
VDSS =
ID25 =
RDS(on)
75
220
4.5
V
A
mΩ
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 175°C, RG = 3.3 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
75
75
± 20
220
75
600
25
1.0
VG
V DS
V
A TO-3P (IXTQ)
A
A
A
J
(TAB)
3
480
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
G
D
S
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
3.6 4.5 mΩ
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99635 (11/06)



IXYS Corporation
IXYS Corporation

IXTQ220N075T Datasheet Preview

IXTQ220N075T Datasheet

Power MOSFET

No Preview Available !

IXTQ220N075T pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS= 10 V; ID = 60 A, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on) Resistive Switching Times
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
td(off) RG = 3.3 Ω (External)
tf
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC
RthCH
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/μs
VR = 40 V, VGS = 0 V
IXTH220N075T
IXTQ220N075T
Characteristic Values
Min. Typ. Max.
75 120
S
7700
1100
230
pF
pF
pF
29 ns
65 ns
55 ns
47 ns
165 nC
40 nC
50 nC
0.25
0.31 °C/W
°C/W
Characteristic Values
Min. Typ. Max.
220 A
600 A
1.0 V
80 ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
Notes: 1. Pulse test, t 300 μs, duty cycle d 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537


Part Number IXTQ220N075T
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
PDF Download
IXTQ220N075T pdf
Download PDF File
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 IXTQ220N075T Power MOSFET IXYS Corporation
IXYS Corporation
IXTQ220N075T pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components