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IXYS Corporation
IXYS Corporation

IXZ308N120 Datasheet Preview

IXZ308N120 Datasheet

Z-MOS RF Power MOSFET

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IXZ308N120 pdf
IXZ308N120
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode LSiwneitcahr 1M7o5dMeHRzFRMFOMSOFSEFTET
LowCCapaapcaictaitnacneceZ-ZM-MOOSTSMTMMMOOSFSEFTETPrPorcoecsesss
Optimized for RLiFneOapr eOrapteiorantion
Ideal for Class ACB, D&, C&,EBAropapdliccaastito&nsCommunications Applications
VDSS
ID25
= 1200 V
= 8.0 A
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDC
PDHS
PDAMB
RthJC
RthJHS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Tc = 25°C, Derate 4.4W/°C above 25°C
Tc = 25°C
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VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
min.
1200
3.5
VGS = 20 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
VDS = 50 V, ID = 0.5ID25, pulse test
-55
1.6mm(0.063 in) from case for 10 s
-55
Maximum Rat-
ings
1200
1200
V
V
±20 V
±30 V
8A
40 A
8A
TBD mJ
5 V/ns
RDS(on)
PDC
=
=
2.1
880 W
>200 V/ns
880 W
440 W
GATE
DRAIN
3.0 W
0.17 C/W
0.34 C/W
typ. max.
6.5
±100
50
1
2.1
10.1
175
+175
+ 175
V
V
nA
µA
mA
S
°C
°C
°C
SG1 SG2
SD1 SD2
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced Z-MOS process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
Easy to mount—no insulators needed
High power density
300 °C
3.5 g



IXYS Corporation
IXYS Corporation

IXZ308N120 Datasheet Preview

IXZ308N120 Datasheet

Z-MOS RF Power MOSFET

No Preview Available !

IXZ308N120 pdf
IXZ308N120
Z-MOS RF Power MOSFET
Symbol
RG
Ciss
Coss
Crss
Cstray
Td(on)
Ton
Td(off)
Toff
Test Conditions
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 1 (External)
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
1
1960
pF
59 pF
9.2 pF
33 pF
4 ns
5 ns
4 ns
6 ns
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions
min.
typ. max.
IS VGS = 0 V
8Α
ISM
VSD
Repetitive; pulse width limited by
TJM
IF=Is, VGS=0 V, Pulse test, t
300µs, duty cycle 2%
48 A
1.5 V
Trr
TBD
ns
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IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585
6,731,002


Part Number IXZ308N120
Description Z-MOS RF Power MOSFET
Maker IXYS Corporation
Total Page 3 Pages
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