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IXYS Corporation
IXYS Corporation

L011 Datasheet Preview

L011 Datasheet

Fast Recovery Epitaxial Diode (FRED) Module

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L011 pdf
Fast Recovery
Epitaxial Diode
(FRED) Module
MEO 550-02 DA
VRRM = 200 V
IFAVM = 582 A
trr = 150 ns
VRSM
V
200
VRRM
V
200
Type
MEO 550-02DA
31
3
1
Symbol
IFRMS
IFAVM ÿÿx
IFRM
IFSM
I2t
TVJ
Tstg
TSmax
Ptot
VISOL
Md
dS
dA
a
Weight
Test Conditions
TC = 75°C
TC = 75°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Creep distance on surface
Strike distance through air
Maximum allowable acceleration
Maximum Ratings
822
582
2880
A
A
A
4800
5280
A
A
4320
4750
A
A
115200
117100
A2s
A2s
93300
94800
A2s
A2s
-40...+150
-40...+125
110
°C
°C
°C
1750 W
3000
3600
V~
V~
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
12.7
9.6
50
mm
mm
m/s2
150 g
Symbol
IR
VF
VT0
rT
RthJH
RthJC
trr
IRM
Test Conditions
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 300 A;
IF = 520 A;
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
For power-loss calculations only
DC current
DC current
IF = 500 A
VR= 100 V
-di/dt = 200 A/ms
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
Characteristic Values (per diode)
typ. max.
5 mA
4 mA
160 mA
0.84 V
1.10 V
1.08 V
1.25 V
0.52 V
1.06 mW
0.114 K/W
0.071 K/W
150 200 ns
9A
15 A
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Features
q International standard package
with DCB ceramic base plate
q Planar passivated chips
q Short recovery time
q Low switching losses
q Soft recovery behaviour
q Isolation voltage 3600 V~
q UL registered E 72873
Applications
q Antiparallel diode for high frequency
switching devices
q Free wheeling diode in converters
and motor control circuits
q Inductive heating and melting
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation
q Low voltage peaks for reduced
protection circuits
q Low noise switching
q Low losses
Dimensions in mm (1 mm = 0.0394")
1-2



IXYS Corporation
IXYS Corporation

L011 Datasheet Preview

L011 Datasheet

Fast Recovery Epitaxial Diode (FRED) Module

No Preview Available !

L011 pdf
MEO 550-02 DA
800
A
700
600
IF
500
400
300
TVJ=125°C
TVJ= 25°C
200
100
0
0.0 0.5 1.0 V 1.5
VF
Fig. 1 Forward current I versus
F
max. voltage drop VF per leg
2.0
1.5
Kf
1.0
0.5
IRM
Qr
3.0
mC
2.5
Qr
2.0
TVJ= 100°C
VR = 100V
IF=1100A
IF= 550A
IF= 275A
1.5
1.0
0.5
0.0
100
A/ms 1000
-diF/dt
Fig. 2 Typ. reverse recovery
charge Qr versus -diF/dt
220
ns
200
trr
180
TVJ= 100°C
VR = 100V
160
IF=1100A
IF= 550A
140 IF= 275A
120
60
A
TVJ= 100°C
VR = 100V
50
IRM
40
30
IF=1100A
IF= 550A
IF= 275A
20
10
0
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 3 Typ. peak reverse current I
RM
versus -diF/dt
60
V
VFR
TVJ= 100°C
IF = 550A
40
tfr
VFR
6
µs
5
tfr
4
3
20 2
1
0.0
0
40 80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Q , I
r RM
versus junction temperature TVJ
1
K/W
100
0 200 400 600 A8/0m0s 1000
-diF/dt
Fig. 5 Typ. recovery time t
rr
versus -diF/dt
0.1
ZtthhJJHS
00
0 200 400 600 A80/m0s 1000
diF/dt
Fig. 6 Typ. peak forward voltage V
FR
and tfr versus diF/dt
Constants for ZthJS calculation:
i
Rthi (K/W)
ti (s)
1 0.001
2 0.004
3 0.027
4 0.082
0.08
0.024
0.112
0.464
0.01
0.001
0.001
0.01
0.1
Fig. 7 Transient thermal impedance junction to heatsink
1
MEO 550-02
s 10
t
© 2000 IXYS All rights reserved
2-2


Part Number L011
Description Fast Recovery Epitaxial Diode (FRED) Module
Maker IXYS Corporation
Total Page 2 Pages
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