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Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
isc Product Specification
APT13005SU-G1
DESCRIPTION
· High Collector-Emitter Voltage
: VCES= 700V(Min.)
·Fast Switching Speed
·Collector Saturation Voltage
: VCE(sat) = 0.3V(Max) @ IC= 1.0A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Battery charges for Mobile Phone of BCD Solution
·Power supply for DVD/STB of BCD Solution
·Driver for LED Lighting of BCD Solution
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700 V
VCEO
Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
3.2 A
ICM Collector Current-Peak
6.4 A
IB Base Current
PC
Collector Power Dissipation
Tc=25
Ti Junction Temperature
Tstg Storage Temperature Range
1.6
20
150
-55~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.25 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



Inchange Semiconductor
Inchange Semiconductor

APT13005SU-G1 Datasheet Preview

APT13005SU-G1 Datasheet

Silicon NPN Power Transistor

No Preview Available !

APT13005SU-G1 pdf
isc Silicon NPN Power Transistor
isc Product Specification
APT13005SU-G1
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2 A ;IB= 0.5A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A ;IB= 0.75A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1 A ;IB= 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 2A ;IB= 0.5A
IEBO Emitter Cutoff Current
VEB= 9V; IC= 0
ICEO Collector Cutoff Curren
VCE= 450V; IB= 0
ICBO Collector Cutoff Curren
VCB= 700V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V;
COB Output Capacitance
VCB= 10V,ftest= 0.1MHz
MIN TYP. MAX UNIT
450 V
0.3 V
0.6 V
1.0 V
1.2 V
1.4 V
10 uA
0.1 mA
10 uA
15 35
8 35
4 MHz
35 pF
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 2A , IB1= -IB2= 0.4A
0.7 μs
4.5 μs
0.8 μs
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number APT13005SU-G1
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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APT13005SU-G1 pdf
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