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BDT85 Datasheet

(BDT81 - BDT87) Silicon NPN Power Transistors

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BDT85 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·DC Current
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Gain
-hFE
=
40(Min)@
IC=
5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83;
100V(Min)- BDT85; 120V(Min)- BDT87
·Complement to Type BDT82/84/86/88
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT81
60
VCBO
Collector-Base Voltage
BDT83
BDT85
80
100
V
BDT87
120
BDT81
60
VCEO
BDT83
Collector-Emitter Voltage
BDT85
80
100
V
BDT87
120
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
15 A
ICM Collector Current-Peak
20 A
IBB Base Current
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
4
125
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1
70
UNIT
/W
/W
isc Product Specification
BDT81/83/85/87
isc Websitewww.iscsemi.cn



Inchange Semiconductor
Inchange Semiconductor

BDT85 Datasheet Preview

BDT85 Datasheet

(BDT81 - BDT87) Silicon NPN Power Transistors

No Preview Available !

BDT85 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDT81/83/85/87
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
BDT81
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT83
BDT85
IC= 30mA; IB= 0
BDT87
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB=B 0.7A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 4V
ICES Collector Cutoff Current
VCE= 0.8VCBOmax; VBE= 0
ICBO Collector Cutoff Current
VCB= VCBOmax; IE= 0
IEBO Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 50mA ; VCE= 10V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= 7A; IB1= -IB2= 0.7A
MIN TYP. MAX UNIT
60
80
V
100
120
1.0 V
1.6 V
1.5 V
1 mA
0.2 mA
0.1 mA
40
40
10 MHz
1 μs
2 μs
isc Websitewww.iscsemi.cn


Part Number BDT85
Description (BDT81 - BDT87) Silicon NPN Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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