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BDT86F Datasheet

(BDT82F - BDT88F) Silicon PNP Power Transistors

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BDT86F pdf
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BDT82F/84F/86F/88F
DESCRIPTION
·DC Current
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Gain
-hFE
=
40(Min)@
IC=
-5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F;
-100V(Min)- BDT86F; -120V(Min)- BDT88F
·Complement to Type BDT81F/83F/85F/87F
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT82F
-60
VCBO
Collector-Base Voltage
BDT84F
BDT86F
-80
-100
V
BDT88F -120
BDT82F
-60
VCEO
BDT84F
Collector-Emitter Voltage
BDT86F
-80
-100
V
BDT88F -120
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-15 A
ICM Collector Current-Peak
-20 A
IBB Base Current
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
-4
36
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6 /W
isc Websitewww.iscsemi.cn



Inchange Semiconductor
Inchange Semiconductor

BDT86F Datasheet Preview

BDT86F Datasheet

(BDT82F - BDT88F) Silicon PNP Power Transistors

No Preview Available !

BDT86F pdf
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BDT82F/84F/86F/88F
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
BDT82F
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT84F
BDT86F
IC= -30mA; IB= 0
BDT88F
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB=B -0.7A
VBE(on) Base-Emitter On Voltage
IC= -5A ; VCE= -4V
ICES Collector Cutoff Current
VCE= 0.8VCBOmax; VBE= 0
ICBO Collector Cutoff Current
VCB= VCBOmax; IE= 0
IEBO Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -50mA ; VCE= -10V
hFE-2
DC Current Gain
IC= -5A ; VCE= -4V
fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= -7A; IB1= -IB2= -0.7A
MIN TYP. MAX UNIT
-60
-80
-100
V
-120
-1.0 V
-1.6 V
-1.5 V
-1 mA
-0.2 mA
-0.1 mA
40
40
20 MHz
1 μs
2 μs
isc Websitewww.iscsemi.cn


Part Number BDT86F
Description (BDT82F - BDT88F) Silicon PNP Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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