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Inchange Semiconductor
Inchange Semiconductor

BUZ307 Datasheet Preview

BUZ307 Datasheet

N-Channel MOSFET Transistor

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BUZ307 pdf
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ307
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·Automotive power actuator drivers
·Motor controls
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
800 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=373 A
Total Dissipation@TC=25
75 W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 /W
Rth j-a Thermal Resistance,Junction to Ambient
75 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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Inchange Semiconductor
Inchange Semiconductor

BUZ307 Datasheet Preview

BUZ307 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

BUZ307 pdf
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUZ307
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 1.5A
IGSS Gate Source Leakage Current
VGS=20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0
VSD Diode Forward Voltage
IF= 6A; VGS= 0
MIN MAX UNIT
800 V
2.1 4
3
V
Ω
100 nA
1 uA
1.3 V
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Part Number BUZ307
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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