| Description | Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automo... |
| Features |
Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS RDS(on) typ. max. ID 60V 20m 26m 7.0A Description Specifi... |
| Datasheet |
 AUIRF7478Q Datasheet - 374.74KB |
