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Infineon Technologies Electronic Components Datasheet

60R190E6 Datasheet

IPA60R190E6

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60R190E6 pdf
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOSE6 Power Transistor
IPx60R190E6
Data Sheet
Rev. 2.0, 2010-05-03
Final
Industrial & Multimarket


Infineon Technologies Electronic Components Datasheet

60R190E6 Datasheet

IPA60R190E6

No Preview Available !

60R190E6 pdf
600V CoolMOSE6 Power Transistor
IPP60R190E6, IPA60R190E6
IPW60R190E6
1 Description
CoolMOSis a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOSE6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.19
63
59
5.2
500
V
!
nC
A
µJ
A/µs
drain
pin 2
gate
pin 1
source
pin 3
Type / Ordering Code
IPW60R190E6
IPP60R190E6
IPA60R190E6
Package
PG-TO247
PG-TO220
PG-TO220 FullPAK
Marking
6R190E6
Related Links
IFX CoolMOS Webpage
IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2010-05-03


Part Number 60R190E6
Description IPA60R190E6
Maker Infineon Technologies
Total Page 17 Pages
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