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Infineon Technologies Electronic Components Datasheet

IHY30N160R2 Datasheet

Reverse conducting IGBT

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IHY30N160R2 pdf
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IHY30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
Powerful monolithic body diode with very low forward voltage
Body diode clamps negative voltages
Trench and fieldstop technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
New TO-247HC package offers increased air & creepage
distances compared to TO247 package
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Halogen free (according to IEC 61249-2-21)
Complete product spectrum and PSpice models:
http://www.infineon.com/igbt/
C
G
E
Applications:
Inductive cooking
Soft switching applications
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHY30N160R2
1600V 30A
1.8V
175°C H30R1602 PG-TO247HC-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1600V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1600
60
30
90
90
60
30
90
50
130
120
±20
±25
312
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1 Nov. 09
Datasheet pdf - http://www.DataSheet4U.net/


Infineon Technologies Electronic Components Datasheet

IHY30N160R2 Datasheet

Reverse conducting IGBT

No Preview Available !

IHY30N160R2 pdf
www.DataSheet.co.kr
IHY30N160R2
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.48
0.48
55
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
RGint
VGE=0V, IC=500µA
VGE = 15V, IC=30A
Tj=25°C
Tj=150°C
Tj=175°C
VGE=0V, IF=30A
Tj=25°C
Tj=150°C
Tj=175°C
IC=0.75mA,
VCE=VGE
VCE=1600V,
VGE=0V
Tj=25°C
Tj=175°C
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
1600
-
-
-
-
-
-
5.1
-
-
-
-
Value
Typ.
-
1.8
2.25
2.35
1.65
2.0
2.0
5.8
-
-
-
22.5
none
Unit
max.
-V
2.1
-
-
2.0
-
-
6.4
µA
5
2500
100
-
nA
S
Power Semiconductors
2
Rev. 2.1 Nov. 09
Datasheet pdf - http://www.DataSheet4U.net/


Part Number IHY30N160R2
Description Reverse conducting IGBT
Maker Infineon Technologies
Total Page 12 Pages
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