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Infineon Technologies Electronic Components Datasheet

IPW60R075CPA Datasheet

Power Transistor

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IPW60R075CPA pdf
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Product Summary
V DS
R DS(on),max
Q g,typ
IPW60R075CPA
600 V
0.075 Ω
87 nC
PG-TO247-3
Type
IPW60R075CPA
Package
PG-TO247-3
Marking
6R075PA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1),2)
AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating temperature
Storage temperature
Mounting torque
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse
E AS
E AR
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
I AR
dv /dt
V DS=0...480 V
V GS
P tot
static
T C=25 °C
Tj
T stg
M3 and M3.5 screws
Rev. 2.0
page 1
Value
39
25
130
1150
1.7
11
50
±20
313
-40 ... 150
-40 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2010-02-15


Infineon Technologies Electronic Components Datasheet

IPW60R075CPA Datasheet

Power Transistor

No Preview Available !

IPW60R075CPA pdf
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
Symbol Conditions
IS
I S,pulse
dv /dt
T C=25 °C
IPW60R075CPA
Value
26
117
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
- - 0.4 K/W
- - 62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=1.74 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=26 A,
T j=25 °C
V GS=10 V, I D=26 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
- 5 µA
- 100 nA
0.068 0.075 Ω
0.18 -
1.3 - Ω
Rev. 2.0
page 2
2010-02-15


Part Number IPW60R075CPA
Description Power Transistor
Maker Infineon Technologies
Total Page 11 Pages
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