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Infineon Technologies Electronic Components Datasheet

SEMD4 Datasheet

NPN/PNP Silicon Digital Transistor Array Preliminary data

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SEMD4 pdf
SEMD4
NPN/PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=10k)
4
5
6
Tape loading orientation
Top View
3 21
45 6
Direction of Unreeling
Marking on SOT666 package
(for example W R)
corresponds to pin 1 of device
Position in tape: pin 1
same of feed hole
side
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07176
3
2
1
Type
SEMD4
Marking
W7
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 75 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
50
50
5
20
100
250
150
-65 ... 150
300
Unit
V
mA
mW
°C
K/W
1 Feb-26-2004


Infineon Technologies Electronic Components Datasheet

SEMD4 Datasheet

NPN/PNP Silicon Digital Transistor Array Preliminary data

No Preview Available !

SEMD4 pdf
SEMD4
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
-
-V
V(BR)CBO 50
-
-
ICBO
- - 100 nA
hFE 120 - 630 -
VCEsat - - 0.3 V
Vi(off)
0.4 -
1
Vi(on)
0.5 - 1.1
R1
R1/R2
7 10 13 k
0.9 1 1.1 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT - 130 - MHz
Ccb - 3 - pF
1) Pulse test: t < 300µs; D < 2%
2
Feb-26-2004


Part Number SEMD4
Description NPN/PNP Silicon Digital Transistor Array Preliminary data
Maker Infineon Technologies AG
Total Page 5 Pages
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