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International Rectifier Electronic Components Datasheet

AUIRF2807 Datasheet

Power MOSFET

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AUIRF2807 pdf
AUTOMOTIVE GRADE
PD - 96384A
AUIRF2807
Features
HEXFET® Power MOSFET
l Advanced Planar Technology
D V(BR)DSS
75V
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
RDS(on) max. 13mΩ
l Fast Switching
l Fully Avalanche Rated
hG
ID(Silicon Limited)
82A
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
S
ID (Package Limited)
75A
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
D
G
Gate
S
D
G
TO-220AB
AUIRF2807
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Max.
82h
58
75
280
230
1.5
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dgSingle Pulse Avalanche Energy
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
±20 V
340 mJ
43 A
23 mJ
5.9 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
––– 0.65
0.50 ––– °C/W
––– 62
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRF2807 Datasheet

Power MOSFET

No Preview Available !

AUIRF2807 pdf
AUIRF2807
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
75 ––– –––
––– 0.074 –––
––– ––– 13
2.0 ––– 4.0
38 ––– –––
––– ––– 25
V
V/°C
mΩ
V
S
μA
VGS = 0V, ID = 250μA
fReference to 25°C, ID = 1mA
VGS = 10V, ID = 43A
fVDS = VGS, ID = 250μA
VDS = 50V, ID = 43A
VDS = 75V, VGS = 0V
––– ––– 250
VDS = 60V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100
nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
––– ––– 160
ID = 43A
Qgs Gate-to-Source Charge
––– ––– 29
nC VDS = 60V
fQgd
Gate-to-Drain ("Miller") Charge
––– ––– 55
VGS = 10V, See Fig.6 and 13
td(on)
Turn-On Delay Time
––– 13 –––
VDD = 38V
tr Rise Time
––– 64 –––
ID = 43A
td(off)
tf
Turn-Off Delay Time
Fall Time
Ãf––– 49 ––– ns RG = 2.5Ω
––– 48 –––
VGS = 10V,, See Fig.10
LD Internal Drain Inductance
LS Internal Source Inductance
Between lead,
––– 4.5 –––
nH 6mm (0.25in.)
––– 7.5 –––
Between lead,
and center of die contact
G
Ciss Input Capacitance
––– 3820 –––
VGS = 0V
Coss Output Capacitance
––– 610 –––
pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 130 –––
ƒ = 1.0MHz, See Fig.5
D
S
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
h––– ––– 82
MOSFET symbol
A showing the
––– ––– 280
––– ––– 1.2
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 43A, VGS = 0V
f––– 100 150
ns TJ = 25°C, IF = 43A
––– 410 610 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 370μH, RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
ƒ ISD 43A, di/dt 300A/μs, VDD V(BR)DSS, TJ 175°C
„ Pulse width 400μs; duty cycle 2%.
… This is a calculated value limited to TJ = 175°C .
† Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2 www.irf.com
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Part Number AUIRF2807
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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