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International Rectifier Electronic Components Datasheet

AUIRF3305 Datasheet

Power MOSFET

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AUIRF3305 pdf
AUTOMOTIVE MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
PD - 96336
AUIRF3305
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max. 8m
S ID
140A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
G
Gate
TO-220AB
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy(Thermally limited)
dhSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
iJunction-to-Case
Parameter
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
140
99
560
330
2.2
± 20
470
860
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRF3305 Datasheet

Power MOSFET

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AUIRF3305 pdf
AUIRF3305
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V VGS = 0V, ID = 250µA
V(BR)DSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
ej––– 0.055 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 8.0 mVGS = 10V, ID = 75A
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
2.0 ––– 4.0
41 ––– –––
jV VDS = VGS, ID = 250µA
S VDS = 25V, ID = 75A
––– –––
25
µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
––– 100 150
Qgs Gate-to-Source Charge
––– 21 ––– nC
Qgd
Gate-to-Drain ("Miller") Charge
––– 45 –––
td(on)
Turn-On Delay Time
––– 16 –––
tr Rise Time
––– 88 –––
td(off)
Turn-Off Delay Time
––– 43 ––– ns
tf Fall Time
––– 34 –––
LD Internal Drain Inductance
––– 4.5 –––
nH
LS Internal Source Inductance ––– 7.5 –––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 3650 –––
––– 1230 –––
––– 450 –––
––– 4720 –––
––– 930 –––
––– 1490 –––
pF
jID = 75A
eVDS = 44V
VGS = 10V
jVDD = 28V
ID = 75A
eRG = 2.6
VGS = 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– –––
75
MOSFET symbol
––– ––– 560
A showing the
integral reverse
p-n junction diode.
j e––– ––– 1.3
V TJ = 25°C, IS = 75A , VGS = 0V
j––– 57 86 ns TJ = 25°C, IF = 75A , VDD = 28V
e––– 130 190 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
(See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.17mH RG = 25, IAS = 75A,
VGS =10V. Part not recommended for use above this value.
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
† This value determined from sample failure population. 100% tested to this
value in production.
‡ Rθ is measured at TJ of approximately 90°C.
ˆ All AC and DC test conditions based on former package limited
current of 75A.
2 www.irf.com
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Part Number AUIRF3305
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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