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International Rectifier Electronic Components Datasheet

AUIRF7313Q Datasheet

Power MOSFET

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AUIRF7313Q pdf
Features
l Advanced Planar Technology
l Dual N Channel MOSFET
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
PD - 97751
AUIRF7313Q
HEXFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID
30V
23mΩ
29mΩ
6.9A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7313Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Thermal Resistance
RθJL
RθJA
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Parameter
Junction-to-Drain Lead
ghJunction-to-Ambient
Max.
30
6.9
5.8
58
2.4
0.02
± 20
450
3.6
-55 to + 175
Max.
20
62.5
Units
V
A
W
W/°C
V
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRF7313Q Datasheet

Power MOSFET

No Preview Available !

AUIRF7313Q pdf
AUIRF7313Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
30 ––– ––– V VGS = 0V, ID = 250μA
––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
f––– 23
f––– 32
29
46
mΩ
VGS = 10V, ID = 6.9A
VGS = 4.5V, ID = 5.5A
1.0 ––– 3.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
7.5 ––– ––– S VDS = 15V, ID = 3.5A
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– -100
––– 100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 22 33
ID = 3.5A
Qgs Gate-to-Source Charge
––– 2.6 3.9 nC VDS = 15V
fQgd
Gate-to-Drain ("Miller") Charge
––– 6.8 10
VGS = 10V
td(on)
Turn-On Delay Time
––– 3.7 –––
VDD = 15V
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
f–––
–––
7.3 –––
21 –––
ns
ID = 3.5A
RG = 6.8Ω
––– 11 –––
VGS =10V
Ciss Input Capacitance
––– 755 –––
VGS = 0V
Coss Output Capacitance
––– 310 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
27
43
Max. Units
Conditions
3.0
MOSFET symbol
A
showing the
integral reverse
G
f58 p-n junction diode.
1.0 V TJ = 25°C, IS = 3.5A, VGS = 0V
f40 ns TJ = 25°C,IF = 3.5A
65 nC di/dt = 100A/μs
D
S
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 76mH, RG = 50Ω, IAS = 3.5A, VGS =10V. Part not recommended for use above this value.
ƒ ISD 3.5A, di/dt 590A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… When mounted on 1 inch square copper board.
† Rθ is measured at TJ of approximately 90°C.
www.irf.com
2
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Part Number AUIRF7313Q
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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