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International Rectifier Electronic Components Datasheet

AUIRF7341Q Datasheet

Power MOSFET

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AUIRF7341Q pdf
Features
l Advanced Planar Technology
l Ultra Low On-Resistance
l Dual N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 175°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free, RoHS Compliant
AUTOMOTIVE MOSFET
PD - 96362A
AUIRF7341Q
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
V(BR)DSS
55V
RDS(on) typ. 0.043Ω
max. 0.050Ω
ID 5.1A
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
G
Gate
SO-8
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ
TSTG
Thermal Resistance
RθJA
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
ePower Dissipation
ePower Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
fJunction-to-Ambient
Parameter
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 16,17,14a, 14b
-55 to + 175
Max.
62.5
Units
V
A
W
mW/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da0ta8s/h2e2e/1t41u.com/


International Rectifier Electronic Components Datasheet

AUIRF7341Q Datasheet

Power MOSFET

No Preview Available !

AUIRF7341Q pdf
AUIRF7341Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
55 ––– ––– V VGS = 0V, ID = 250μA
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
e––– 0.043 0.050
e––– 0.056 0.065
Ω
VGS = 10V, ID = 5.1A
VGS = 4.5V, ID = 4.42A
1.0 ––– 3.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
10.4 ––– –––
––– ––– 2.0
––– ––– 25
S VDS = 10V, ID = 5.2A
μA
VDS = 44V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
––– 29 44
––– 2.9 4.4
––– 7.3 11
––– 9.2 –––
––– 7.7 –––
––– 31 –––
––– 12.5 –––
––– 780 –––
––– 190 –––
ID = 5.2A
nC VDS = 44V
VGS = 10V
VDD = 28V
ens
ID = 1.0A
RG = 6.0Ω
VGS = 10V
VGS = 0V
pF VDS = 25V
Crss Reverse Transfer Capacitance
––– 66 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
51
76
Max. Units
Conditions
e2.4
42
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
1.2 V TJ = 25°C, IS = 2.6A, VGS = 0V
e77 ns TJ = 25°C,IF = 2.6A
114 nC di/dt = 100A/μs
D
S
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ VDD = 25V, starting TJ = 25°C, L = 10.7mH, RG = 25Ω, IAS = 5.2A.
ƒ Pulse width 300μs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.
2 www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRF7341Q
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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