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International Rectifier Electronic Components Datasheet

AUIRF7416Q Datasheet

Power MOSFET

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AUIRF7416Q pdf
AUTOMOTIVE GRADE
PD - 97642
Features
l Advanced Process Technology
l Low On-Resistance
l P-Channel MOSFET
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRF7416Q
HEXFET® Power MOSFET
S1
V8
A
D
(BR)DSS
S2
S3
7D
6 D RDS(on) max.
G4
5D
Top View
ID
-30V
0.02Ω
-10A
Description
Specifically designed for Automotive applications, this cel-
lular design of HEXFET® Power MOSFETs utilizes the lat-
est processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automo-
tive and a wide variety of other applications.
SO-8
AUIRF7416Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifica-
tions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature
(TA) is 25°C, unless otherwise specified.
Parameter
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
PD @TA = 25°C
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRθJA Junction-to-Ambient
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Max.
50
Units
A
W
mW/°C
V
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRF7416Q Datasheet

Power MOSFET

No Preview Available !

AUIRF7416Q pdf
AUIRF7416Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
-30 ––– ––– V VGS = 0V, ID = -250μA
––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
f–––
f–––
––– 0.020
––– 0.035
Ω
VGS = -10V, ID = -5.6A
VGS = -4.5V, ID = -2.8A
-1.0 ––– -2.04 V VDS = VGS, ID = -250μA
gfs Forward Transconductance
5.6 ––– ––– S VDS = -10V, ID = -2.8A
IDSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– -100
––– 100
nA
VGS = -20V
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 61 92
ID = -5.6A
Qgs Gate-to-Source Charge
––– 8.0 12 nC VDS = -24V
Qgd
Gate-to-Drain ("Miller") Charge
––– 22 32
VGS = -10V, See Fig. 6 & 9
td(on)
Turn-On Delay Time
––– 18 –––
VDD = -15V
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
f–––
–––
49
59
–––
–––
ns
ID = -5.6A
RG = 6.2Ω
––– 60 –––
RD = 2.7Ω, See Fig. 10
Ciss Input Capacitance
––– 1700 –––
VGS = 0V
Coss Output Capacitance
––– 890 ––– pF VDS = -25V
Crss
Reverse Transfer Capacitance
––– 410 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
56
99
Max. Units
Conditions
e-3.1
-45
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
-1.0 V TJ = 25°C, IS = -5.6A, VGS = 0V
e85 ns TJ = 25°C,IF = -5.6A
150 nC di/dt = 100A/μs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -5.6A. (See Figure 12)
ƒ ISD -5.6A, di/dt 100A/µs, VDD V(BR)DSS,
TJ 150°C.
„ Pulse width 300µs; duty cycle 2%.
… Surface mounted on FR-4 board, t 10sec.
2 www.irf.com
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Part Number AUIRF7416Q
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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