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International Rectifier Electronic Components Datasheet

AUIRFP4004 Datasheet

Power MOSFET

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AUIRFP4004 pdf
AUTOMOTIVE GRADE
PD - 96407A
AUIRFP4004
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S ID (Package Limited)
40V
1.35mΩ
1.70mΩ
c350A
195A
D
G
Gate
S
D
G
TO-247AC
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Max.
™350
™250
195
1390
380
Units
A
W
Linear Derating Factor
2.5 W/°C
VGS
EAS
IAR
EAR
dv/dt
eGate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
ÃdAvalanche Current
gRepetitive Avalanche Energy
fPeak Diode Recovery
± 20
290
See Fig. 14, 15, 21a, 21b
2.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
x x10lb in (1.1N m)
Thermal Resistance
Symbol
RθJC
Parameter
kJunction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
jJunction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.40
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da0ta9s/h0e6e/1t41u.com/


International Rectifier Electronic Components Datasheet

AUIRFP4004 Datasheet

Power MOSFET

No Preview Available !

AUIRFP4004 pdf
AUIRFP4004
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
40 ––– ––– V VGS = 0V, ID = 250μA
d––– 0.035 ––– V/°C Reference to 25°C, ID = 5mA
g––– 1.35 1.70 mΩ VGS = 10V, ID = 195A
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
290 ––– –––
––– ––– 20
S VDS = 10V, ID = 195A
μA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 220 330
––– 59 –––
––– 75 –––
––– 145 –––
nC ID = 195A
gVDS = 20V
VGS = 10V
ID = 195A, VDS =0V, VGS = 10V
RG(int)
td(on)
Internal Gate Resistance
Turn-On Delay Time
––– 6.8 ––– Ω
––– 59 ––– ns VDD = 20V
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 370 –––
––– 160 –––
––– 190 –––
––– 8920 –––
––– 2360 –––
––– 930 –––
––– 2860 –––
––– 3110 –––
ID = 195A
gRG = 2.7Ω
VGS = 10V
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz
iVGS = 0V, VDS = 0V to 32V
hVGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãdi(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 350 A MOSFET symbol
D
––– ––– 1390
showing the
integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 195A, VGS = 0V
S
––– 83 130 ns TJ = 25°C
VR = 20V,
––– 78 120
––– 190 290
TJ = 125°C
nC TJ = 25°C
gIF = 195A
di/dt = 100A/μs
––– 210 320
TJ = 125°C
––– 4.0 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 195A, di/dt 690A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. Refer to App Notes (AN-1140).
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.015mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2 www.irf.com
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Part Number AUIRFP4004
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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