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International Rectifier Electronic Components Datasheet

AUIRFR3806 Datasheet

HEXFET Power MOSFET

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AUIRFR3806 pdf
AUTOMOTIVE GRADE
PD - 97644
AUIRFR3806
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
60V
12.6mΩ
15.8mΩ
43A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
G
Gate
D
S
G
D-Pak
AUIRFR3806
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
fRepetitive Avalanche Energy
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
43
31
170
71
0.47
± 20
73
25
7.1
24
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
jRθJC
Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
iJunction-to-Ambient
Typ.
–––
0.50
–––
Max.
2.12
–––
62
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/11/11


International Rectifier Electronic Components Datasheet

AUIRFR3806 Datasheet

HEXFET Power MOSFET

No Preview Available !

AUIRFR3806 pdf
AUIRFR3806
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
60 ––– ––– V VGS = 0V, ID = 250μA
™––– 0.075 ––– V/°C Reference to 25°C, ID = 5mA
f––– 12.6 15.8 mΩ VGS = 10V, ID = 25A
2.0 ––– 4.0 V VDS = VGS, ID = 50μA
41 ––– ––– S VDS = 10V, ID = 25A
RG(int)
IDSS
Internal Gate Resistance
Drain-to-Source Leakage Current
––– 0.79 ––– Ω
––– ––– 20 μA
––– ––– 250
IGSS Gate-to-Source Forward Leakage
––– ––– 100 nA
Gate-to-Source Reverse Leakage
––– ––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
–––
Qgs Gate-to-Source Charge
–––
Qgd Gate-to-Drain ("Miller") Charge
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
td(on)
Turn-On Delay Time
–––
tr Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf Fall Time
–––
Ciss Input Capacitance
–––
Coss Output Capacitance
–––
Crss
Coss eff. (ER)
Coss eff. (TR)
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
gEffective Output Capacitance (Time Related)
–––
Diode Characteristics
22
5.0
6.3
28.3
6.3
40
49
47
1150
130
67
190
230
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC ID = 25A
fVDS = 30V
VGS = 10V
ID = 25A, VDS =0V, VGS = 10V
ns VDD = 39V
ID = 25A
fRG = 20Ω
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
hVGS = 0V, VDS = 0V to 60V
gVGS = 0V, VDS = 0V to 60V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
––– ––– 43 A MOSFET symbol
D
(Body Diode)
showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
––– ––– 170
integral reverse
G
––– ––– 1.3
p-n junction diode.
fV TJ = 25°C, IS = 25A, VGS = 0V
S
––– 22 33 ns TJ = 25°C
VR = 51V,
––– 26 39
TJ = 125°C
––– 17 26 nC TJ = 25°C
fIF = 25A
di/dt = 100A/μs
––– 24 36
TJ = 125°C
––– 1.4 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.23mH
RG = 25Ω, IAS = 25A, VGS =10V. Part not recommended for
use above this value.
ƒ ISD 25A, di/dt 1580A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
2 www.irf.com


Part Number AUIRFR3806
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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