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International Rectifier Electronic Components Datasheet

AUIRFR4105 Datasheet

Power MOSFET

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AUIRFR4105 pdf
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed
up toTjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVEGRADE
PD - 97597A
AUIRFR4105
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max.
45mΩ
gG
ID (Silicon Limited)
27A
S ID (Package Limited)
20A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
S
G
D-Pak
AUIRFR4105
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
hRθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB mount) **
RθJA
Junction-to-Ambient
Max.
27g
19
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRFR4105 Datasheet

Power MOSFET

No Preview Available !

AUIRFR4105 pdf
AUIRFR4105
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.052 –––
––– ––– 45
V/°C Reference to 25°C, ID = 1mA
fmΩ VGS = 10V, ID = 16A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
6.5 ––– ––– S VDS = 25V, ID = 16A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– ––– 34
ID = 16A
Qgs Gate-to-Source Charge
––– ––– 6.8 nC VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– ––– 14
VGS = 10V, See Fig. 6 & 13
td(on)
Turn-On Delay Time
––– 7.0 –––
VDD = 28V
tr Rise Time
––– 49 –––
ID = 16A
td(off)
tf
Turn-Off Delay Time
Fall Time
f––– 31 ––– ns RG = 18Ω
––– 40 –––
RD = 1.8Ω, See Fig. 10
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
––– 700 –––
––– 240 –––
––– 100 –––
and center of die contact
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
Parameter
Min. Typ. Max. Units
Conditions
gIS
Continuous Source Current
––– ––– 27
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 100
A showing the
integral reverse
––– ––– 1.6
fp-n junction diode.
V TJ = 25°C, IS = 16A, VGS = 0V
f––– 57 86 ns TJ = 25°C, IF = 16A
––– 130 200 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 410μH
RG = 25Ω, IAS = 16A. (See Figure 12)
ƒ ISD 16A, di/dt 420A/μs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 300μs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
† Rθ is measured at Tj approximately 90°C.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2 www.irf.com
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Part Number AUIRFR4105
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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