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International Rectifier Electronic Components Datasheet

AUIRFR4620 Datasheet

Power MOSFET

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AUIRFR4620 pdf
AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
PD - 97681
AUIRFR4620
HEXFET® Power MOSFET
D VDSS
200V
RDS(on) typ.
64m:
max. 78m:
S ID
24A
G
Gate
D
S
G
D-Pak
AUIRFR4620
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Max.
24
17
100
144
0.96
± 20
113
See Fig. 14, 15, 22a, 22b,
54
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRFR4620 Datasheet

Power MOSFET

No Preview Available !

AUIRFR4620 pdf
AUIRFR4620
Static Electrical @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
200 ––– ––– V VGS = 0V, ID = 250μA
™––– 0.23 ––– V/°C Reference to 25°C, ID = 5mA
f––– 64 78 mΩ VGS = 10V, ID = 15A
3.0 ––– 5.0 V VDS = VGS, ID = 100μA
gfs Forward Transconductance
37 ––– ––– S VDS = 50V, ID = 15A
RG(int)
IDSS
IGSS
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– 2.6 ––– Ω
–––
–––
–––
–––
20
250
μA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
–––
Qgs Gate-to-Source Charge
–––
Qgd Gate-to-Drain ("Miller") Charge
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
td(on)
Turn-On Delay Time
–––
tr Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf Fall Time
–––
Ciss Input Capacitance
–––
Coss Output Capacitance
–––
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
gCoss eff. (TR) Effective Output Capacitance (Time Related)
–––
25
8.2
7.9
17
13.4
22.4
25.4
14.8
1710
125
30
113
317
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = 15A
fnC
VDS = 100V
VGS = 10V
ID = 15A, VDS =0V, VGS = 10V
VDD = 130V
fns
ID = 15A
RG = 7.3Ω
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz (See Fig.5)
hVGS = 0V, VDS = 0V to 160V (See Fig.11)
gVGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 24
––– ––– 100
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
fV TJ = 25°C, IS = 15A, VGS = 0V
D
S
–––
–––
78
99
–––
–––
ns
TJ = 25°C
TJ = 125°C
–––
–––
294
432
–––
–––
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
fIF = 15A
di/dt = 100A/μs
––– 7.6 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 15A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 15A, di/dt 634A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C
2 www.irf.com
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Part Number AUIRFR4620
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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