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International Rectifier Electronic Components Datasheet

AUIRFS3107-7P Datasheet

Power MOSFET

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AUIRFS3107-7P pdf
AUTOMOTIVE GRADE
PD - 96395A
AUIRFS3107-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
HEXFET® Power MOSFET
D VDSS
75V
RDS(on) typ.
2.1mΩ
max.
ID (Silicon Limited)
c2.6mΩ
260A
S ID (Package Limited)
240A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
applications.
D
S
SS
S
S
G
D2Pak 7 Pin
AUIRFS3107-7P
GD S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
dAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
klRθJC
Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount)
Max.
c260
190
240
1060
370
2.5
± 20
320
See Fig. 14, 15, 22a, 22b
13
-55 to + 175
300
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRFS3107-7P Datasheet

Power MOSFET

No Preview Available !

AUIRFS3107-7P pdf
AUIRFS3107-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
75 ––– –––
––– 0.083 –––
––– 2.1 2.6
V VGS = 0V, ID = 250μA
dV/°C Reference to 25°C, ID = 5mA
gmΩ VGS = 10V, ID = 160A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance
260 ––– ––– S VDS = 25V, ID = 160A
RG Internal Gate Resistance
IDSS Drain-to-Source Leakage Current
––– 2.1 –––
––– ––– 20
Ω
μA VDS = 75V, VGS = 0V
––– ––– 250
VDS = 75V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 160 240
ID = 160A
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
g–––
–––
38
57
–––
–––
nC
VDS = 38V
VGS = 10V
Qsync
td(on)
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
––– 103 –––
––– 17 –––
ID = 160A, VDS =0V, VGS = 10V
VDD = 49V
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
hEffective Output Capacitance (Time Related)
–––
80
100
64
9200
850
400
1150
1500
–––
–––
–––
–––
–––
–––
–––
–––
gns
ID = 160A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
iVGS = 0V, VDS = 0V to 60V
hVGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 260
MOSFET symbol
D
––– ––– 1060
A
showing the
integral reverse
G
––– ––– 1.3
p-n junction diode.
S
gV TJ = 25°C, IS = 160A, VGS = 0V
––– 52 –––
––– 63 –––
––– 110 –––
ns
TJ = 25°C
TJ = 125°C
nC TJ = 25°C
VR = 64V,
gIF = 160A
di/dt = 100A/μs
––– 160 –––
TJ = 125°C
––– 3.8 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width 400μs; duty cycle 2%.
temperature. Bond wire current limit is 240A. Note that current
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as Coss while VDS is rising from 0 to 80% VDSS.
some lead mounting arrangements.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.026mH
RG = 25Ω, IAS = 160A, VGS =10V. Part not recommended for use
above this value .
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering echniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Š RθJC value shown is at time zero.
„ ISD 160A, di/dt 1420A/μs, VDD V(BR)DSS, TJ 175°C.
2 www.irf.com
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Part Number AUIRFS3107-7P
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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