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International Rectifier Electronic Components Datasheet

AUIRFS3207Z Datasheet

Power MOSFET

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AUIRFS3207Z pdf
AUTOMOTIVE GRADE
PD - 96403A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
AUIRFS3207Z
AUIRFSL3207Z
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S ID (Package Limited)
75V
3.3m:
4.1m:
c170A
120A
DD
S
G
D2Pak
AUIRFS3207Z
S
GD
TO-262
AUIRFSL3207Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
dv/dt
EAS
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
fPeak Diode Recovery
eSingle Pulse Avalanche Energy (Thermally limited)
ÃdAvalanche Current
dRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
™170
™120
120
670
300
2.0
± 20
16
170
See Fig. 14, 15, 22a, 22b
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C
Thermal Resistance
Parameter
kRθJC Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount) , D2Pak
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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International Rectifier Electronic Components Datasheet

AUIRFS3207Z Datasheet

Power MOSFET

No Preview Available !

AUIRFS3207Z pdf
AUIRFS/SL3207Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
75 ––– –––
––– 0.091 –––
––– 3.3 4.1
2.0 ––– 4.0
280 ––– –––
V VGS = 0V, ID = 250μA
dV/°C Reference to 25°C, ID = 5mA
gmΩ VGS = 10V, ID = 75A
V VDS = VGS, ID = 150μA
S VDS = 50V, ID = 75A
RG(int)
IDSS
IGSS
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– 0.80 –––
––– ––– 20
––– ––– 250
––– ––– 100
––– ––– -100
Ω
μA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 120 170
––– 27 –––
––– 33 –––
––– 87 –––
––– 20 –––
––– 68 –––
––– 55 –––
––– 68 –––
––– 6920 –––
––– 600 –––
––– 270 –––
––– 770 –––
––– 960 –––
ID = 75A
gnC
VDS = 38V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 49V
gns
ID = 75A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
iVGS = 0V, VDS = 0V to 60V
hVGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 170
MOSFET symbol
A
showing the
integral reverse
G
––– ––– 670
––– ––– 1.3
gp-n junction diode.
V TJ = 25°C, IS = 75A, VGS = 0V
D
S
––– 36
––– 41
54
62
ns
TJ = 25°C
TJ = 125°C
–––
–––
50
67
75
100
nC
TJ = 25°C
TJ = 125°C
VR = 64V,
gIF = 75A
di/dt = 100A/μs
––– 2.4 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25Ω, IAS = 102A, VGS =10V. Part not recommended for use
above this value.
„ ISD 75A, di/dt 1730A/μs, VDD V(BR)DSS, TJ 175°C.
… Pulse width 400μs; duty cycle 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2 www.irf.com
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Part Number AUIRFS3207Z
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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International Rectifier
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