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International Rectifier Electronic Components Datasheet

AUIRFS8407-7P Datasheet

Power MOSFET

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AUIRFS8407-7P pdf
AUTOMOTIVE GRADE
Features
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Applications
D
S
G
Gate
AUIRFS8407-7P
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
40V
1.0mΩ
1.3mΩ
ID (Silicon Limited) 306A
ID (Package Limited) 240A
D
SSS
SS
G
D2Pak 7 Pin
D
D ra in
S
Source
Base part number
Package Type
AUIRFS8407-7P
D2Pak-7PIN
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Orderable Part Number
AUIRFS8407-7P
AUIRFS8407-7TRL
AUIRFS8407-7TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
306
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
216
240
1040
A
PD @TC = 25°C Maximum Power Dissipation
231 W
Linear Derating Factor
1.5 W/°C
VGS
EAS (Thermally limited)
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
± 20
344
508
See Fig. 14, 15, 24a, 24b
V
mJ
A
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 30, 2013
Free Datasheet http://www.datasheet4u.com/


International Rectifier Electronic Components Datasheet

AUIRFS8407-7P Datasheet

Power MOSFET

No Preview Available !

AUIRFS8407-7P pdf
AUIRFS8407-7P
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case 
Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.65
40
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs Forward Transconductance
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD
dv/dt
Diode Forward Voltage
Peak Diode Recovery
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
40 ––– ––– V VGS = 0V, ID = 250μA
––– 0.035 ––– V/°C Reference to 25°C, ID = 1.0mA
––– 1.0 1.3 mΩ VGS = 10V, ID = 100A
2.2 ––– 3.9 V VDS = VGS, ID = 150μA
––– ––– 1.0
––– ––– 150
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
––– 2.2 ––– Ω
Min.
122
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
150
41
51
99
18
62
78
51
7437
1097
748
–––
225
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 10V, ID = 100A
ID = 100A
nC
VDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 20V
ns
ID = 30A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0 MHz
1314 –––
1735 –––
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Min. Typ. Max. Units
Conditions
––– ––– 306
MOSFET symbol
––– ––– 1040
A
showing the
integral reverse
p-n junction diode.
D
G
S
––– 1.0 1.3 V TJ = 25°C, IS = 100A, VGS = 0V
––– 3.5 ––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
–––
–––
37
38
–––
–––
ns
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 100A
–––
–––
34
36
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/μs
––– 1.8 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.069mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
ISD 100A, di/dt 1288A/μs, VDD V(BR)DSS, TJ 175°C.
2 www.irf.com © 2013 International Rectifier
Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
April 30, 2013
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRFS8407-7P
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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1 AUIRFS8407-7P Power MOSFET International Rectifier
International Rectifier
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