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International Rectifier Electronic Components Datasheet

AUIRFSL3107 Datasheet

Power MOSFET

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AUIRFSL3107 pdf
AUTOMOTIVE GRADE
PD - 96394A
AUIRFS3107
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
AUIRFSL3107
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
75V
2.5m:
3.0m:
c230A
S ID (Package Limited) 195A
DD
S
G
D2Pak
AUIRFS3107
S
GD
TO-262
AUIRFSL3107
GD S
Absolute Maximum Ratings
Gate
D ra in
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
™230
160
195
900
370
2.5
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
ÃdAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
± 20
300
See Fig. 14, 15, 22a, 22b
14
-55 to + 175
300
V
mJ
A
mJ
V/ns
°C
Parameter
klRθJC Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.dat1a1sh/1e/e1t14u.com/


International Rectifier Electronic Components Datasheet

AUIRFSL3107 Datasheet

Power MOSFET

No Preview Available !

AUIRFSL3107 pdf
AUIRFS/SL3107
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 ––– ––– V VGS = 0V, ID = 250μA
d––– 0.09 ––– V/°C Reference to 25°C, ID = 5mA
g––– 2.5 3.0 mΩ VGS = 10V, ID = 140A
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance
RG Internal Gate Resistance
230 ––– –––
––– 1.2 –––
S VDS = 50V, ID = 140A
Ω
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 20
––– ––– 250
μA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 160 240
––– 38 –––
––– 54
––– 106 –––
––– 19 –––
––– 110 –––
––– 99 –––
––– 100 –––
––– 9370 –––
––– 840 –––
ID = 140A
gnC
VDS =38V
VGS = 10V
ID = 140A, VDS =0V, VGS = 10V
VDD = 49V
gns
ID = 140A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
Crss Reverse Transfer Capacitance
––– 580 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1130 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1500 –––
pF ƒ = 1.0 MHz, See Fig. 5
iVGS = 0V, VDS = 0V to 60V , See Fig. 11
hVGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 230
MOSFET symbol
D
––– ––– 900
A
showing the
integral reverse
G
––– ––– 1.3
––– 54 –––
––– 60 –––
––– 103 –––
––– 132 –––
p-n junction diode.
gV TJ = 25°C, IS = 140A, VGS = 0V
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 64V,
gIF = 140A
di/dt = 100A/μs
S
––– 3.6 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 140A, di/dt 1380A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.045mH
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25Ω, IAS = 140A, VGS =10V. Part not recommended for use
above this value .
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
2
Š RθJC value shown is at time zero.
www.irf.com
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Part Number AUIRFSL3107
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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