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International Rectifier Electronic Components Datasheet

AUIRFU120Z Datasheet

Power MOSFET

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AUIRFU120Z pdf
PD - 96345
AUIRFR120Z
AUTOMOTIVE MOSFET
AUIRFU120Z
Features
l Advanced Process Technology
HEXFET® Power MOSFET
D V(BR)DSS
100V
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
RDS(on) typ. 150m
G max. 190m
S ID
8.7A
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
DD
S
GD
D-Pak
AUIRFR120Z
G
Gate
D
Drain
S
GD
I-Pak
AUIRFU120Z
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
8.7
6.1 A
35
35 W
0.23 W/°C
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy(Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
± 20
18
20
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
––– 4.28
––– 50 °C/W
––– 110
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
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International Rectifier Electronic Components Datasheet

AUIRFU120Z Datasheet

Power MOSFET

No Preview Available !

AUIRFU120Z pdf
AUIRFR/U120Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.084 –––
––– 150 190
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 5.2A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 25µA
gfs Forward Transconductance
16 ––– ––– S VDS = 25V, ID = 5.2A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
––– 6.9 10
ID = 5.2A
Qgs Gate-to-Source Charge
––– 1.6 ––– nC VDS = 80V
eQgd
Gate-to-Drain ("Miller") Charge
––– 3.1 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 8.3 –––
VDD = 50V
tr Rise Time
––– 26 –––
ID = 5.2A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 27 ––– ns RG = 53
––– 23 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 310 –––
––– 41 –––
––– 24 –––
––– 150 –––
––– 26 –––
––– 57 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 8.7
MOSFET symbol
––– ––– 35
A showing the
integral reverse
––– ––– 1.3
ep-n junction diode.
V TJ = 25°C, IS = 5.2A, VGS = 0V
e––– 24 36 ns TJ = 25°C, IF = 5.2A, VDD = 50V
––– 23 35 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through ‡ are on page 3
2
www.irf.com
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Part Number AUIRFU120Z
Description Power MOSFET
Maker International Rectifier
Total Page 14 Pages
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