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International Rectifier Electronic Components Datasheet

AUIRFU4292 Datasheet

Power MOSFET

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AUIRFU4292 pdf
AUTOMOTIVE GRADE
PD - 97792
AUIRFR4292
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
AUIRFU4292
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max.
S ID
250V
275m
345m
9.3A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D
S
G
D-Pak
AUIRFR4292
S
D
G
I-Pak
AUIRFU4292
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRJC
Junction-to-Case
iRJA Junction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
Max.
9.3
6.6
40
100
0.67
± 20
130
97
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.5
50
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datashe0e6t/h1t8tp/1:/2/www.datasheet4u.com/


International Rectifier Electronic Components Datasheet

AUIRFU4292 Datasheet

Power MOSFET

No Preview Available !

AUIRFU4292 pdf
AUIRFR/U4292
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
250 ––– –––
V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.31 ––– V/°C Reference to 25°C, ID = 1.0mA
eRDS(on)
Static Drain-to-Source On-Resistance ––– 275 345 mVGS = 10V, ID = 5.6A
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 50μA
gfs Forward Transconductance
6.2 ––– –––
V VDS = 50V, ID = 5.6A
IDSS
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250
IGSS
Gate-to-Source Forward Leakage
––– ––– 100
Gate-to-Source Reverse Leakage
––– ––– -100
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
μA VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Units
Conditions
Qg Total Gate Charge
––– 13
20
ID = 5.6A
Qgs Gate-to-Source Charge
––– 4.7 ––– nC VDS = 125V
eQgd
Gate-to-Drain ("Miller") Charge
––– 4.8 –––
VGS = 10V
td(on) Turn-On Delay Time
––– 11 –––
VDD = 250V
tr Rise Time
––– 15 –––
ID = 5.6A
td(off) Turn-Off Delay Time
tf Fall Time
e––– 16 ––– ns RG = 15
––– 8.4 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
and center of die contact
––– 705 –––
VGS = 0V
––– 71 –––
VDS = 25V
––– 20 ––– pF ƒ = 1.0MHz
S
––– 600 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 26 –––
––– 65 –––
fVGS = 0V, VDS = 200V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 200V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 9.3
MOSFET symbol
D
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 40
A showing the
integral reverse
G
––– ––– 1.3
ep-n junction diode.
S
V TJ = 25°C, IS = 5.6A, VGS = 0V
e––– 110 165 ns TJ = 25°C, IF = 5.6A, VDD = 125V
––– 390 585 nC di/dt = 100A/μs
Intrins icturn-on timeis negligible(turn-on is dominatedbyLS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 8.1mH
RG = 50, IAS = 5.6A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
† This value is determined from sample failure
population, starting TJ = 25°C, L = 8.1mH,
RG = 50, IAS = 5.6A, VGS =10V.
2
‡ When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
ˆ Ris measured at TJ approximately 90°C.
www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRFU4292
Description Power MOSFET
Maker International Rectifier
Total Page 14 Pages
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