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International Rectifier Electronic Components Datasheet

AUIRFU4615 Datasheet

Power MOSFET

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AUIRFU4615 pdf
AUTOMOTIVE GRADE
PD -96398A
AUIRFR4615
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRFU4615
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ.
34m:
:G max. 42m
S ID
33A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
DD
G
Gate
S
G
DPak
AUIRFR4615
S
GD
IPAK
AUIRFU4615
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
33
24 A
140
144 W
Linear Derating Factor
0.96 W/°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
dGate-to-Source Voltage
Single Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
± 20
109
See Fig. 14, 15, 22a, 22b,
38
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300(1.6mm from case)
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da1t0a/s0h4e/e1t14u.com/


International Rectifier Electronic Components Datasheet

AUIRFU4615 Datasheet

Power MOSFET

No Preview Available !

AUIRFU4615 pdf
AUIRFR/U4615
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
150 ––– ––– V VGS = 0V, ID = 250μA
™––– 0.19 ––– V/°C Reference to 25°C, ID = 5mA
f––– 34 42 mΩ VGS = 10V, ID = 21A
3.0 ––– 5.0 V VDS = VGS, ID = 100μA
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
35 ––– ––– S VDS = 50V, ID = 21A
–––
–––
–––
–––
20
250
μA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
RG(int)
Internal Gate Resistance
––– 2.7 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 26
––– 8.6 –––
––– 9.0 –––
––– 17 –––
––– 15 –––
––– 35 –––
––– 25 –––
––– 20 –––
––– 1750 –––
––– 155 –––
––– 40 –––
––– 179 –––
––– 382 –––
ID = 21A
fnC
VDS = 75V
VGS = 10V
ID = 21A, VDS =0V, VGS = 10V
VDD = 98V
fns
ID = 21A
RG = 7.3Ω
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz (See Fig.5)
hVGS = 0V, VDS = 0V to 120V (See Fig.11)
gVGS = 0V, VDS = 0V to 120V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 33
––– ––– 140
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 21A, VGS = 0V
D
S
–––
–––
70
83
–––
–––
ns
TJ = 25°C
TJ = 125°C
–––
–––
177
247
–––
–––
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
fIF = 21A
di/dt = 100A/μs
––– 4.9 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.51mH
RG = 25Ω, IAS = 21A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 21A, di/dt 549A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994
ˆ Rθ is measured at TJ approximately 90°C
2 www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRFU4615
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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