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International Rectifier Electronic Components Datasheet

AUIRFZ24NS Datasheet

Power MOSFET

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AUIRFZ24NS pdf
AUTOMOTIVE GRADE
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
PD - 96377
AUIRFZ24NS
AUIRFZ24NL
HEXFET® Power MOSFET
D
V(BR)DSS
55V
RDS(on) max. 0.07Ω
S ID
17A
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
DD
DS
G
DS
G
D2Pak
TO-262
AUIRFZ24NS AUIRFZ24NL
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB mounted, steady-state)
Max.
17
12
68
3.8
45
0.3
± 20
71
10
4.5
6.8
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
3.3
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://0w6w/2w2.d/1a1tasheet4u.com/


International Rectifier Electronic Components Datasheet

AUIRFZ24NS Datasheet

Power MOSFET

No Preview Available !

AUIRFZ24NS pdf
AUIRFZ24NS/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55 ––– –––
V VGS = 0V, ID = 250μA
f––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.07
Ω VGS = 10V, ID = 10A
2.0 ––– 4.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
4.5 ––– –––
S VDS = 25V, ID = 10A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
––– ––– 20
ID = 10A
Qgs Gate-to-Source Charge
––– ––– 5.3
nC VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– ––– 7.6
VGS = 10V,See Fig 6 and 13
td(on)
Turn-On Delay Time
––– 4.9 –––
VDD = 28V
tr Rise Time
––– 34 –––
ID = 10A
td(off)
tf
Turn-Off Delay Time
Fall Time
Ãf––– 19 ––– ns RG = 24Ω
––– 27 –––
RD = 2.6Ω, See Fig.10
LS Internal Source Inductance
––– 7.5 –––
Between lead,
and center of die contact
Ciss Input Capacitance
––– 370 –––
VGS = 0V
Coss Output Capacitance
––– 140 –––
pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 65 –––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 17
MOSFET symbol
A showing the
––– ––– 68
––– ––– 1.3
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 10A, VGS = 0V
f––– 56 83 ns TJ = 25°C, IF = 10A
––– 120 180 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L =1.0mH, RG = 25Ω, IAS = 10A. (See Figure 12)
ƒ ISD 10A, di/dt 280A/µs, VDD V(BR)DSS, TJ 175°C
„ Pulse width 280µs; duty cycle 2%.
… When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
2
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Part Number AUIRFZ24NS
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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