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International Rectifier Electronic Components Datasheet

AUIRL3705Z Datasheet

Power MOSFET

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AUIRL3705Z pdf
AUTOMOTIVE GRADE
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
G
PD - 96345
AUIRL3705Z
AUIRL3705ZS
AUIRL3705ZL
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) typ. 6.5m
max. 8.0m
lS ID (Silicon Limited) 86A
ID (Package Limited) 75A
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
AUIRL3705Z
D2Pak
TO-262
AUIRL3705ZS AUIRL3705ZL
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy(Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
kJunction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
Max.
86l
61
75
340
130
0.88
± 16
120
180
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.14
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www1.d2a/0ta9s/h1e0et4u.com/


International Rectifier Electronic Components Datasheet

AUIRL3705Z Datasheet

Power MOSFET

No Preview Available !

AUIRL3705Z pdf
AUIRL3705Z/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
V(BR)DSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
55 ––– –––
––– 0.055 –––
––– 6.5 8.0
V
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 11 m
––– –––
12
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
1.0 ––– 3.0
150 ––– –––
V
V
IDSS
Drain-to-Source Leakage Current
––– –––
20
––– ––– 250
µA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 200
––– -200
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 52A
eVGS = 5.0V, ID = 43A
eVGS = 4.5V, ID = 30A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 52A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
––– 40
60
Qgs Gate-to-Source Charge
––– 12 ––– nC
Qgd
Gate-to-Drain ("Miller") Charge
––– 21 –––
td(on)
Turn-On Delay Time
––– 17 –––
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 240 –––
––– 26 –––
ns
tf Fall Time
––– 83 –––
LD Internal Drain Inductance
––– 4.5 –––
LS Internal Source Inductance
nH
––– 7.5 –––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2880 –––
––– 420 –––
––– 220 –––
––– 1500 –––
––– 330 –––
––– 510 –––
pF
ID = 43A
eVDS = 44V
VGS = 5.0V
VDD = 28V
ID = 43A
eRG = 4.3
VGS = 5.0V
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
D
S
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– –––
75
––– ––– 340
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
ep-n junction diode.
V TJ = 25°C, IS = 52A, VGS = 0V
e––– 16 24 ns TJ = 25°C, IF = 43A, VDD = 28V
––– 7.4 11 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.09mH
RG = 25, IAS = 52A, VGS =10V. Part not recommended for use
above this value.
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
2
‡ This is only applied to TO-220AB pakcage.
ˆ This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
‰ Rθ is measured at TJ of approximately 90°C.
Š Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 75A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRL3705Z
Description Power MOSFET
Maker International Rectifier
Total Page 15 Pages
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