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International Rectifier Electronic Components Datasheet

AUIRLL024Z Datasheet

Power MOSFET

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AUIRLL024Z pdf
PD - 97762
AUTOMOTIVE GRADE
AUIRLL024Z
Features
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) typ.
48m
max. 60m
S ID
5.0A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
G
Gate
D
S
D
G
SOT-223
AUIRLL024Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
iContinuous Drain Current, VGS @ 10V
iContinuous Drain Current, VGS @ 10V
™Pulsed Drain Current
iPower Dissipation
jPower Dissipation
iLinear Derating Factor
5.0
4.0 A
40
2.8
1.0 W
0.02 W/°C
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
± 16
21
38
See Fig.12a, 12b, 15, 16
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Thermal Resistance
°C
Parameter
Typ.
Max.
Units
iRJA Junction-to-Ambient (PCB mount, steady state)
–––
jRJA Junction-to-Ambient (PCB mount, steady state)
–––
45 °C/W
120
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datashe0et2h/2t8tp/1:/2/www.datasheet4u.com/


International Rectifier Electronic Components Datasheet

AUIRLL024Z Datasheet

Power MOSFET

No Preview Available !

AUIRLL024Z pdf
AUIRLL024Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.049 –––
––– 48 60
––– ––– 80
––– ––– 100
V/°C
m
Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 3.0A
eVGS = 5.0V, ID = 3.0A
eVGS = 4.5V, ID = 3.0A
VGS(th)
Gate Threshold Voltage
1.0 ––– 3.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
7.5 ––– –––
S VDS = 25V, ID = 3.0A
IDSS
Drain-to-Source Leakage Current
––– ––– 20
μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
––– 7.0 11
––– 1.5 –––
––– 4.0 –––
––– 8.6 –––
––– 33 –––
––– 20 –––
––– 15 –––
––– 380 –––
––– 66 –––
––– 36 –––
––– 220 –––
––– 53 –––
––– 93 –––
ID = 3.0A
enC VDS = 44V
VGS = 5.0V
VDD = 28V
ns ID = 3.0A
eRG = 56
VGS = 5.0V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
––– ––– 5.0
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 40
A showing the
integral reverse
G
––– ––– 1.3
––– 15 23
––– 9.1 14
ep-n junction diode.
S
V TJ = 25°C, IS = 3.0A, VGS = 0V
ens TJ = 25°C, IF = 3.0A, VDD = 28V
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 4.8mH
RG = 25, IAS = 3.0A, VGS =10V.
Part not recommended for use above this value.
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from
0 to 80% VDSS.
2
…Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
†This value determined from sample failure population,
starting TJ = 25°C, L = 4.8mH, RG = 25, IAS = 3.0A,
VGS =10V.
‡When mounted on 1 inch square copper board.
ˆWhen mounted on FR-4 board using minimum
recommended footprint.
www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRLL024Z
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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