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International Rectifier Electronic Components Datasheet

AUIRLR014N Datasheet

HEXFET Power MOSFET

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AUIRLR014N pdf
AUTOMOTIVEGRADE
PD - 97740
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
AUIRLR014N
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
S ID
55V
0.14
10A
G
Gate
D
S
G
D-Pak
AUIRLR014N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
gRJC
Junction-to-Case
hRJA Junction-to-Ambient (PCB mount)
RJA Junction-to-Ambient
10
7.1
40
28
0.2
± 16
35
6.0
2.8
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
5.3
50
110
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/10/11


International Rectifier Electronic Components Datasheet

AUIRLR014N Datasheet

HEXFET Power MOSFET

No Preview Available !

AUIRLR014N pdf
AUIRLR014N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
ffRDS(on)
Static Drain-to-Source On-Resistance
–––
–––
––– 0.14
––– 0.21
VGS = 10V, ID = 6.0A
VGS = 4.5V, ID = 5.0A
VGS(th)
Gate Threshold Voltage
1.0 ––– 3.0
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
3.1 ––– ––– S VDS = 25V, ID = 6.0A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– ––– 7.9
ID = 6.0A
Qgs Gate-to-Source Charge
––– ––– 1.4 nC VDS = 44V
fQgd
Gate-to-Drain ("Miller") Charge
––– ––– 4.4
VGS = 5.0V, See Fig. 6 & 13
td(on)
Turn-On Delay Time
––– 6.5 –––
VDD = 28V
tr Rise Time
––– 47 –––
ID = 6.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
f––– 12 ––– ns RG = 6.2VGS = 5.0V
––– 23 –––
RD = 4.5See Fig. 10
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
and center of die contact
––– 265 –––
VGS = 0V
––– 80 –––
VDS = 25V
––– 38 ––– pF ƒ = 1.0MHz, See Fig. 5
S
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 10
MOSFET symbol
D
(Body Diode)
A showing the
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 40
––– ––– 1.3
integral reverse
G
p-n junction diode.
S
fV TJ = 25°C, IS = 6.0A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
f––– 37 56 ns TJ = 25°C, IF = 6.0A
––– 48 71 nC di/dt = 100A/μs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.96mH
RG = 25, IAS = 6A. (See Figure 12)
ƒ ISD 6.0A, di/dt 210A/μs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 300μs; duty cycle 2%.
… This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
† When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
2 www.irf.com


Part Number AUIRLR014N
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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