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International Rectifier Electronic Components Datasheet

AUIRLR2703 Datasheet

Power MOSFET

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AUIRLR2703 pdf
AUTOMOTIVEGRADE
PD - 97620
AUIRLR2703
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
30V
RDS(on) max.
45m
ID (Silicon Limited)
S ID (Package Limited)
23A
20A
D
S
G
D-Pak
AUIRLR2703
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
16 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
™IDM Pulsed Drain Current
20
96
PD @TC = 25°C Power Dissipation
Linear Derating Factor
45 W
0.30 W/°C
VGS
EAS
EAS (tested )
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery
± 16 V
77 mJ
200
14 A
4.5 mJ
5.0 V/ns
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/11/2011


International Rectifier Electronic Components Datasheet

AUIRLR2703 Datasheet

Power MOSFET

No Preview Available !

AUIRLR2703 pdf
AUIRLR2703
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.030 ––– V/°C Reference to 25°C, ID = 1mA
f––– ––– 0.045
VGS = 10V, ID = 14A
f––– ––– 0.065 VGS = 4.5V, ID = 12A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
1.0 ––– –––
6.4 ––– –––
iV VDS = VGS, ID = 250µA
S VDS = 25V, ID = 14A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 µA VDS = 30V, VGS = 0V
––– ––– 250
VDS = 24V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
––– ––– 15
ID = 14A
fi––– ––– 4.6
––– ––– 9.3
nC VDS = 24V
VGS = 4.5V
––– 8.5 –––
VDD = 15V
––– 140 –––
ID = 14A
fi––– 12 ––– ns RG = 12
––– 20 –––
VGS = 4.5V, RD = 1.1
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
gand center of die contact
––– 450 –––
––– 210 –––
––– 110 –––
VGS = 0V
iVDS = 25V
pF ƒ = 1.0MHz
D
S
Parameter
Min. Typ. Max. Units
Conditions
gIS
Continuous Source Current
––– ––– 23
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 96
––– ––– 1.3
integral reverse
G
p-n junction diode.
S
fV TJ = 25°C, IS = 14A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– 65 97 ns TJ = 25°C, IF = 14A
fi––– 140 210 nC di/dt = 100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L =570µH
RG = 25, IAS = 14A. (See Figure 12)
ƒ ISD 14A, di/dt 140A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 300µs; duty cycle 2%.
2
… Caculated continuous current based on maximum allowable
junction temperature. Package limitation current = 20A.
† This is applied for I-PAK, LS of D-PAK is measured
between lead and center of die contact.
‡ Uses IRL2703 data and test conditions.
www.irf.com


Part Number AUIRLR2703
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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