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International Rectifier Electronic Components Datasheet

AUIRLR2905Z Datasheet

Power MOSFET

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AUIRLR2905Z pdf
AUTOMOTIVE GRADE
PD - 97583
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
AUIRLR2905Z
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max. 13.5m
G
ID (Silicon Limited)
60A
S ID (Package Limited) 42A
D
G
Gate
S
G
D-Pak
AUIRLR2905Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
Max.
60
43
42
240
110
0.72
± 16
57
85
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datas1h0e/e2t8h/2tt0p1:/0/www.datasheet4u.com/


International Rectifier Electronic Components Datasheet

AUIRLR2905Z Datasheet

Power MOSFET

No Preview Available !

AUIRLR2905Z pdf
AUIRLR2905Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
55 ––– –––
––– 0.053 –––
––– 11 13.5
––– ––– 20
––– ––– 22.5
1.0 ––– 3.0
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 36A
emVGS = 5.0V, ID = 30A
emVGS = 4.5V, ID = 15A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
25 ––– ––– S VDS = 25V, ID = 36A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 23 35
ID = 36A
Qgs Gate-to-Source Charge
––– 8.5 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 12 –––
VGS = 5.0V
td(on)
Turn-On Delay Time
––– 14 –––
VDD = 28V
tr Rise Time
––– 130 –––
ID = 36A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 24 ––– ns RG = 15
––– 33 –––
VGS = 5.0V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
––– 1570 –––
––– 230 –––
––– 130 –––
––– 840 –––
––– 180 –––
––– 290 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 42
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 240
A showing the
integral reverse
––– ––– 1.3
ep-n junction diode.
V TJ = 25°C, IS = 36A, VGS = 0V
e––– 22 33 ns TJ = 25°C, IF = 36A, VDD = 28V
––– 14 21 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.089mH
RG = 25, IAS = 36A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
† This value determined from sample failure population,
starting TJ = 25°C, L = 0.089mH, RG = 25, IAS = 36A,
VGS =10V.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
2 www.irf.com
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Part Number AUIRLR2905Z
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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