http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




International Rectifier Electronic Components Datasheet

AUIRLR2908 Datasheet

HEXFET Power MOSFET

No Preview Available !

AUIRLR2908 pdf
AUTOMOTIVE GRADE
PD - 97734
AUIRLR2908
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
80V
RDS(on) typ.
22.5m
max
ID (Silicon Limited)
k28m
39A
S ID (Package Limited)
30A
G
Gate
D
S
G
D-Pak
AUIRLR2908
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
39k
Units
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
28 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
cIDM Pulsed Drain Current
30
150
PD @TC = 25°C Power Dissipation
Linear Derating Factor
120
0.77
W
W/°C
VGS
EAS
EAS (tested )
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
± 16
180
250
See Fig. 12a, 12b, 15, 16
2.3
V
mJ
A
mJ
V/ns
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
lRJC
Junction-to-Case
jRJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
1.3
40
Units
°C/W
RJA Junction-to-Ambient
––– 110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/17/11


International Rectifier Electronic Components Datasheet

AUIRLR2908 Datasheet

HEXFET Power MOSFET

No Preview Available !

AUIRLR2908 pdf
AUIRLR2908
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
80 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.085 –––
––– 22.5 28
––– 25 30
V/°C Reference to 25°C, ID = 1mA
ffm
VGS = 10V, ID = 23A
VGS = 4.5V, ID = 20A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
1.0 ––– 2.5
35 ––– –––
fV VDS = VGS, ID = 250μA
S VDS = 25V, ID = 23A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 80V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 22 33
ID = 23A
Qgs Gate-to-Source Charge
––– 6.0 9.1 nC VDS = 64V
fQgd
Gate-to-Drain ("Miller") Charge
––– 11 17
VGS = 4.5V
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 40V
tr Rise Time
––– 95 –––
ID = 23A
td(off)
tf
Turn-Off Delay Time
Fall Time
f––– 36 ––– ns RG = 8.3
––– 55 –––
VGS = 4.5V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss
Coss eff.
gOutput Capacitance
Effective Output Capacitance
Diode Characteristics
––– 1890 –––
––– 260 –––
––– 35 –––
––– 1920 –––
––– 170 –––
––– 310 –––
and center of die contact
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
Parameter
Min. Typ. Max. Units
Conditions
kIS
Continuous Source Current
––– ––– 39
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 150
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 23A, VGS = 0V
f––– 75 110 ns TJ = 25°C, IF = 23A, VDD = 25V
––– 210 310 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.71mH, RG = 25, IAS = 23A, VGS =10V. Part not recommended for use above
this value.
ƒ ISD 23A, di/dt 400A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
‡ This value determined from sample failure population, starting TJ = 25°C, L = 0.71mH, RG = 25, IAS = 23A,
VGS =10V.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.
‰ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
Š Ris measured at TJ of approximately 90°C.
2 www.irf.com


Part Number AUIRLR2908
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 13 Pages
PDF Download
AUIRLR2908 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 AUIRLR2905 Power MOSFET Infineon
Infineon
AUIRLR2905 pdf
2 AUIRLR2905 HEXFET Power MOSFET International Rectifier
International Rectifier
AUIRLR2905 pdf
3 AUIRLR2905Z Power MOSFET International Rectifier
International Rectifier
AUIRLR2905Z pdf
4 AUIRLR2908 HEXFET Power MOSFET International Rectifier
International Rectifier
AUIRLR2908 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components