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International Rectifier Electronic Components Datasheet

AUIRLR3410 Datasheet

Power MOSFET

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AUIRLR3410 pdf
AUTOMOTIVE GRADE
PD - 97491
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
G
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the
designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of
other applications.
AUIRLR3410
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
S ID
100V
105m
17A
G
Gate
D
S
G
D-Pak
AUIRLR3410
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dgSingle Pulse Avalanche Energy (Thermally Limited)
ÙgAvalanche Current
™gRepetitive Avalanche Energy
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRθJC Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
Max.
17
12
60
79
0.53
± 16
150
9.0
7.9
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
04/12/2010
Free Datasheet http://www.datasheet4u.com/


International Rectifier Electronic Components Datasheet

AUIRLR3410 Datasheet

Power MOSFET

No Preview Available !

AUIRLR3410 pdf
AUIRLR3410
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.122 ––– V/°C Reference to 25°C, ID = 1mA
f––– ––– 0.105 VGS = 10V, ID = 10A
f––– ––– 0.125
VGS = 5.0V, ID = 10A
f––– ––– 0.155
VGS = 4.0V, ID = 9.0A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
1.0 ––– 2.0
7.7 ––– –––
gV VDS = VGS, ID = 250µA
S VDS = 25V, ID = 9.0A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– ––– 34
ID = 9.0A
Qgs Gate-to-Source Charge
––– ––– 4.8 nC VDS = 80V
fgQgd
Gate-to-Drain ("Miller") Charge
––– ––– 20
VGS = 5.0V
td(on)
Turn-On Delay Time
––– 7.2 –––
VDD = 50V
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
––– 53 –––
ID = 9.0A
fg––– 30 ––– ns RG = 6.0
––– 26 –––
VGS = 5.0V
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
––– 800 –––
––– 160 –––
––– 90 –––
and center of die contact
VGS = 0V
gVDS = 25V
pF ƒ = 1.0MHz
S
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 17
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 60
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 9.0A, VGS = 0V
fg––– 140 210 ns TJ = 25°C, IF = 9.0A
––– 740 1100 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig.11 )
‚ VDD = 25V, starting TJ = 25°C, L = 3.1mH
RG = 25, IAS = 9.0A. (See Figure 12)
ƒ ISD 9.0A, di/dt 540A/µs, VDD V(BR)DSS, TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Uses IRL530N data and test conditions.
† This is applied for LS of D-PAK is measured between
lead and center of die contact
‡ When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
ˆ Rθ is measured at Tj approximately 90°C.
2 www.irf.com
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Part Number AUIRLR3410
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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