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International Rectifier Electronic Components Datasheet

AUIRLS4030-7P Datasheet

Power MOSFET

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AUIRLS4030-7P pdf
AUTOMOTIVE GRADE
PD - 96399A
AUIRLS4030-7P
Features
l Optimized for Logic Level Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
3.2mΩ
G max. 3.9mΩ
S ID
190A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
G
Gate
S
SS
S
S
G
D2Pak 7 Pin
AUIRLS4030-7P
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
190
130 A
750
370 W
Linear Derating Factor
2.5 W/°C
VGS
EAS
IAR
EAR
dv/dt
dGate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
cAvalanche Current
fRepetitive Avalanche Energy
ePeak Diode Recovery
± 16
320
See Fig. 14, 15, 22a, 22b
13
V
mJ
A
mJ
V/ns
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300
°C
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
x x10lbf in (1.1N m)
Avalanche Characteristics
Thermal Resistance
Parameter
jkRθJC Junction-to-Case
ijRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da1t1a/s1h7e/e1t14u.com/


International Rectifier Electronic Components Datasheet

AUIRLS4030-7P Datasheet

Power MOSFET

No Preview Available !

AUIRLS4030-7P pdf
AUIRLS4030-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 ––– ––– V VGS = 0V, ID = 250μA
™––– 0.10 ––– V/°C Reference to 25°C, ID = 5mA
f––– 3.2 3.9 mΩ VGS = 10V, ID = 110A
f––– 3.3 4.1
VGS = 4.5V, ID = 94A
1.0 ––– 2.5 V VDS = VGS, ID = 250μA
250 ––– ––– S VDS = 25V, ID = 110A
––– ––– 20 μA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
RG(int)
Internal Gate Resistance
––– 2.0 ––– Ω
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 93 140
––– 27 –––
––– 43 –––
––– 50 –––
––– 53 –––
––– 160 –––
––– 110 –––
––– 87 –––
––– 11490 –––
––– 680 –––
––– 300 –––
––– 760 –––
––– 1170 –––
nC ID = 110A
fVDS = 50V
VGS = 4.5V
ID = 110A, VDS =0V, VGS = 4.5V
ns VDD = 65V
ID = 110A
fRG = 2.7Ω
VGS = 4.5V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
hVGS = 0V, VDS = 0V to 80V
gVGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 190 A MOSFET symbol
D
––– ––– 750
showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
V TJ = 25°C, IS = 110A, VGS = 0V
S
––– 53 ––– ns TJ = 25°C
VR = 85V,
––– 63 –––
TJ = 125°C
––– 99 ––– nC TJ = 25°C
fIF = 110A
di/dt = 100A/μs
––– 155 –––
TJ = 125°C
––– 3.3 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.05mH
RG = 25Ω, IAS = 110A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 110A, di/dt 1520A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
‰ RθJC value shown is at time zero.
2 www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number AUIRLS4030-7P
Description Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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