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International Rectifier Electronic Components Datasheet

AUIRLS4030 Datasheet

Power MOSFET

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AUIRLS4030 pdf
AUTOMOTIVE GRADE
PD - 96406B
AUIRLS4030
Features
AUIRLSL4030
l Optimized for Logic Level Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ. 3.4mΩ
G max. 4.3mΩ
S ID
180A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
GDS
D2Pak
AUIRLS4030
GDS
TO-262
AUIRLSL4030
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
dGate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
ikRθJC
Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount) , D2Pak
Max.
180
130
730
370
2.5
± 16
305
See Fig. 14, 15, 22a, 22b,
21
-55 to + 175
300
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da1t1a/s1h7e/e1t14u.com/


International Rectifier Electronic Components Datasheet

AUIRLS4030 Datasheet

Power MOSFET

No Preview Available !

AUIRLS4030 pdf
AUIRLS/SL4030
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 ––– ––– V VGS = 0V, ID = 250μA
™––– 0.10 ––– V/°C Reference to 25°C, ID = 5mA
f––– 3.4 4.3 mΩ VGS = 10V, ID = 110A
f––– 3.6 4.5
VGS = 4.5V, ID = 92A
1.0 ––– 2.5 V VDS = VGS, ID = 250μA
320 ––– ––– S VDS = 25V, ID = 110A
––– ––– 20
––– ––– 250
μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = -16V
RG(int)
Internal Gate Resistance
––– 2.1 ––– Ω
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 87 130
––– 27 –––
––– 45 –––
––– 42 –––
––– 74 –––
––– 330 –––
––– 110 –––
––– 170 –––
––– 11360 –––
––– 670 –––
––– 290 –––
––– 760 –––
––– 1140 –––
ID = 110A
fnC
VDS = 50V
VGS = 4.5V
ID = 110A, VDS =0V, VGS = 4.5V
VDD = 65V
fns
ID = 110A
RG = 2.7Ω
VGS = 4.5V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
hVGS = 0V, VDS = 0V to 80V
gVGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
––– ––– 730
––– ––– 1.3
––– 50 –––
––– 60 –––
––– 88 –––
––– 130 –––
––– 3.3 –––
MOSFET symbol
D
A
showing the
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 110A, VGS = 0V
S
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 85V,
fIF = 110A
di/dt = 100A/μs
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.05mH, RG = 25Ω,
IAS = 110A, VGS =10V. Part not recommended for use above
this value .
ƒ ISD 110A, di/dt 1330A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
2
… Coss eff. (TR) is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ Rθ is measured at TJ approximately 90°C.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
‰ RθJC value shown is at time zero.
www.irf.com
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Part Number AUIRLS4030
Description Power MOSFET
Maker International Rectifier
Total Page 13 Pages
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