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International Rectifier Electronic Components Datasheet

HFA04TB60SPBF Datasheet

SOFT RECOVERY DIODE

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HFA04TB60SPBF pdf
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PD-96035
HFA04TB60SPbF
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
• Lead-Free
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Ultrafast, Soft Recovery Diode
(K)
BASE
+
2
(N/C) 1
-
3
_-
(A)
VR = 600V
VF = 1.8V
Qrr * = 40nC
di(rec)M/dt * = 280A/µs
* 125°C
Description
International Rectifier's HFA04TB60S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA04TB60S is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60S is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
D2 Pak
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
www.irf.com
Max.
600
4.0
25
16
25
10
-55 to +150
Units
V
A
W
°C
1
10/07/05


International Rectifier Electronic Components Datasheet

HFA04TB60SPBF Datasheet

SOFT RECOVERY DIODE

No Preview Available !

HFA04TB60SPBF pdf
HFA04TB60SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
600 ––– ––– V IR = 100µA
1.5 1.8
IF = 4.0A
VFM Max Forward Voltage
––– 1.8 2.2 V IF = 8.0A
See Fig. 1
IRM Max Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
1.4 1.7
IF = 4.0A, TJ = 125°C
0.17 3.0 µA VR = VR Rated
See Fig. 2
44 300
TJ = 125°C, VR = 0.8 x VR RatedD Rated
––– 4.0 8.0 pF VR = 200V
See Fig. 3
––– 8.0 ––– nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Reverse Recovery Time
See Fig. 5 & 6
Peak Recovery Current
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
Min. Typ. Max. Units
Test Conditions
––– 17 –––
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
––– 28 42 ns TJ = 25°C
––– 38 57
TJ = 125°C
IF = 4.0A
––– 2.9 5.2 A TJ = 25°C
––– 3.7 6.7
TJ = 125°C
––– 40 60 nC TJ = 25°C
––– 70 105
TJ = 125°C
––– 280 ––– A/µs TJ = 25°C
––– 235 –––
TJ = 125°C
VR = 200V
dif/dt = 200A/µs
Thermal - Mechanical Characteristics
Tlead
RthJC
RthJA
Wt

‚
Parameter
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Weight
 0.063 in. from Case (1.6mm) for 10 sec
‚ Typical Socket Mount
Min.
––––
––––
––––
––––
––––
Typ.
––––
––––
––––
2.0
0.07
Max.
300
5.0
80
––––
––––
Units
°C
K/W
g
(oz)
2 www.irf.com


Part Number HFA04TB60SPBF
Description SOFT RECOVERY DIODE
Maker International Rectifier
Total Page 7 Pages
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