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International Rectifier Electronic Components Datasheet

IR6320G Datasheet

INTELLIGENT HIGH SIDE MOSFET POWER SWITCH

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IR6320G pdf
Data Sheet 6.125-G
IR6320G
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Features
PWM Current Limit for Short Circuit Protection
Over-Temperature Protection
Active Output Negative Clamp
Reverse Battery Protection for Logic Circuit
Broken Ground Protection
Short to VCC Protection
Low Noise Charge Pump
Sleep Mode Supply Current
4kV ESD Protection On All Pins
Logic Ground Isolated From Power Ground
General Description
The IR6320G is a monolithic HIGH SIDE SWITCH with built
in short circuit, over- temperature, ESD, inductive load turn
off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting
the average current during short circuit if the drain current
exceeds 10A. The protection circuit latches off the high side
switch if the junction temperature exceeds 170°C and
latches on after the junction temperature falls by 10°C. The
Vcc (drain) to OUT (source) voltage is actively clamped at 55V,
improving its performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating
and referenced to the source of the power MOSFET. Thus
the logic to power ground isolation can be as high as 50V.
This allows operation with larger offset as well as controlling
the switch during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
Vcc(op)
Rds(on)
Ilim
Tj(sd)
Eav
5v-50v
85m
10A
170oC
100mJ
Applications
Solenoid Driver
Programmable Logic Controller
Truth Table
Condition
In Out
Dg
Normal
HH
H
Normal
LL
L
Output Open
HH
H
Output Open
LH
H
Shorted Output H Current-Limiting L
Shorted Output
PWM Mode
LL
L
Over-Temperature H
L
L
Over-Temperature L
L
L
Block Diagram
Available Packages
Vcc
SO8 Package
GND
OUT


International Rectifier Electronic Components Datasheet

IR6320G Datasheet

INTELLIGENT HIGH SIDE MOSFET POWER SWITCH

No Preview Available !

IR6320G pdf
IR6320G
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which
damage to the device may occur. (Tc = 25oC unless otherwise specified.)
Symbol Parameter
Min. Max. Units
Vcc
Voffset
Vin
Iin
Vout
Iout
Vdg
Idg
Eav
ESD1
Supply Voltage
Permanent
Reverse
Logic to Power Ground Offset
Input Voltage
Input Current
Output Voltage
Output Current
Diagnostic Output Voltage
Diagnostic Output Current
Repetitive Avalanche Energy
Electrostatic Discharge (Human Body Model)
-0.3
-16
Vcc -50
-0.3
Vcc -50
-0.3
50
Vcc +0.3
7
10
Vcc +0.3
self-limited
7
10
100
4000
V
mA
V
A
V
mA
mJ
V
ESD2
PD
TJop
TStg
Electrostatic Discharge (Machine Model)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
— 500 V
— 2W
-40 150
-40 150 oC
Test Conditions
Pin 5 to Pin 3
(1), for 10 seconds
I = 2A(2)
C=100 pF, R = 1500
C=200 pF, R = 0
Tambient= 25oC
NOTES: (1) with 15k resistors in input and diagnostic
(rectangular waveform)
(2) maximum frequency depends on heatsink
Static Electrical Characteristics
(Tc = 25oC and Vcc = 16V unless otherwise specified.)
Symbol Parameter
Vccop
Iccoff
Iccon
Iccac
Vih
Vil
Ilon
Iloff
Ioh
Iol
Vdgl
Idgh
RDS(on)
Operating Voltage Range
Sleep Mode Supply Current
Supply Current (Average)
Supply Current (AC RMS)
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
On-State Input Current
Off-State Input Current
Output Leakage Current
Output Leakage Current
Low Level Diagnostic Output Voltage
Diagnostic Output Leakage Current
On-State Resistance
Min.
5
1
10
1
0
0
Typ. Max. Units Test Conditions
— 50 V
30 — µA Vcc=24V, Vin=0V
1 — mA Vin = 5V
20 — µA Vin = 5V
2 2.5 V
1.8 —
— 140
Vin = 5.5V
— 30 µA Vin = 0.4V
20 —
Vout = 6V
— 10
Vout = 0V
0.3 — V Idg = 1.6mA
— 10 µA Vdg = 5V
70 85 mIout = 2A
Switching Electrical Characteristics
(VCC = 14V, Resistive Load (RL) = 12, TC= 25oC.)
Symbol Parameter
Min.
tc Over-Current Cycle Time
Dc Over-Current Duty Cycle
ton
toff
dv/dton
dv/dtoff
Turn-On Delay Time to 90%
Turn-Off Delay Time to 10%
Slew Rate On
Slew Rate Off
2
Typ. Max. Units Test Conditions
3 — mS
10 — %
50
60
µs
3—
5 — V/µs


Part Number IR6320G
Description INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Maker International Rectifier
Total Page 4 Pages
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