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International Rectifier Electronic Components Datasheet

IRF3808PBF Datasheet

HEXFET Power MOSFET

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IRF3808PBF pdf
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PD - 94972
IRF3808PbF
AUTOMOTIVE MOSFET
Typical Applications
HEXFET® Power MOSFET
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Lead-Free
D
VDSS = 75V
Benefits
Advanced Process Technology
Ultra Low On-Resistance
G
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
S
Repetitive Avalanche Allowed up to Tjmax
Description
Designed specifically for Automotive applications, this Advanced
RDS(on) = 0.007
ID = 140A†
Planar Stripe HEXFET ® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching speed and
improved repetitive avalanche rating. This combination makes the
design an extremely efficient and reliable choice for use in higher
power Automotive electronic systems and a wide variety of other
TO-220AB
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
140†
97†
550
330
2.2
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Mounting Torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
02/02/04


International Rectifier Electronic Components Datasheet

IRF3808PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF3808PBF pdf
IRF3808PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
Min. Typ. Max.
75 ––– –––
––– 0.086 –––
––– 5.9 7.0
2.0 ––– 4.0
100 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 150 220
––– 31 47
––– 50 76
––– 16 –––
––– 140 –––
––– 68 –––
––– 120 –––
––– 4.5 –––
LS Internal Source Inductance
––– 7.5 –––
Ciss Input Capacitance
––– 5310 –––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 890 –––
––– 130 –––
Coss
Coss
Output Capacitance
Output Capacitance
––– 6010 –––
––– 570 –––
Coss eff.
Effective Output Capacitance …
––– 1140 –––
Source-Drain Ratings and Characteristics
Units
V
V/°C
m
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 82A „
VDS = 10V, ID = 250µA
VDS = 25V, ID = 82A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 82A
VDS = 60V
VGS = 10V„
VDD = 38V
ID = 82A
RG = 2.5
VGS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 140†
––– ––– 550
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 82A, VGS = 0V „
––– 93 140
––– 340 510
ns TJ = 25°C, IF = 82A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.130mH
RG = 25, IAS = 82A. (See Figure 12).
ƒ ISD 82A, di/dt 310A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
2
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
www.irf.com


Part Number IRF3808PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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