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International Rectifier Electronic Components Datasheet

IRF6622 Datasheet

DirectFET Power MOSFET

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IRF6622 pdf
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PD - 97199
IRF6622
l RoHs Compliant Containing No Lead and Bromide 
l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Socket 
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 4.9m@ 10V 6.8m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
SQ
MP
DirectFET™ ISOMETRIC
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.
The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
20
ID = 15A
15
10
TJ = 125°C
5
TJ = 25°C
0
3456789
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
25
±20
15
12
59
120
13
12
Units
V
A
mJ
A
6.0
5.0 VDS= 20V
VDS= 13V
4.0 VDS= 5.0V
3.0
ID= 12A
2.0
1.0
0.0
0
2 4 6 8 10 12
QG Total Gate Charge (nC)
14
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 12A.
1
04/04/06


International Rectifier Electronic Components Datasheet

IRF6622 Datasheet

DirectFET Power MOSFET

No Preview Available !

IRF6622 pdf
IRF6622
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
55
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
(Body Diode) d
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
17
4.9
6.8
1.8
-5.9
–––
–––
–––
–––
–––
11
2.5
1.6
3.8
3.1
5.4
7.7
1.8
13
87
14
5.6
1450
380
210
Typ.
–––
–––
–––
10
7.1
Max. Units
Conditions
–––
–––
6.3
8.9
2.35
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 15A c
VGS = 4.5V, ID = 12A c
V VDS = VGS, ID = 25µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 13V, ID = 12A
17
––– VDS = 13V
––– nC VGS = 4.5V
––– ID = 12A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
3.1
––– VDD = 13V, VGS = 4.5V c
––– ns ID = 12A
––– Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
2.7 MOSFET symbol
A showing the
120 integral reverse
p-n junction diode.
1.0 V TJ = 25°C, IS = 12A, VGS = 0V c
15 ns TJ = 25°C, IF = 12A
11 nC di/dt = 500A/µs c
Notes:
 Pulse width 400µs; duty cycle 2%.
‚ Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com


Part Number IRF6622
Description DirectFET Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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