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International Rectifier Electronic Components Datasheet

IRF6623PBF Datasheet

HEXFET Power MOSFET

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IRF6623PBF pdf
l RoHS Compliant ‰
l Lead-Free (Qualified up to 260°C Reflow)
wwlwA.dpatpalsichaeetito4un.cSopmecific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible ‰
l Compatible with existing Surface Mount Techniques ‰
PD - 97085
IRF6623PbF
IRF6623TRPbF
DirectFET™ Power MOSFET Š
VDSS
20V
RDS(on) max
5.7m@VGS = 10V
9.7m@VGS = 4.5V
Qg(typ.)
11nC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
ST
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6623PbF has been optimized for param-
eters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to
minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
iContinuous Drain Current, VGS @ 10V
ÃfContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
™Pulsed Drain Current
iPower Dissipation
fPower Dissipation
fPower Dissipation
dSingle Pulse Avalanche Energy
ÙAvalanche Current
Linear Derating Factor
20
±20
55
16
13
120
42
1.4
2.1
43
40
0.017
V
A
W
mJ
A
W/°C
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
-40 to + 150
°C
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
fjJunction-to-Ambient
gjJunction-to-Ambient
hjJunction-to-Ambient
ijJunction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Notes  through Š are on page 2
www.irf.com
1
5/3/06


International Rectifier Electronic Components Datasheet

IRF6623PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF6623PBF pdf
IRF6623PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
www.datasheet4u.com
20
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.4
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
34
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
15
4.4
7.5
–––
-5.4
–––
–––
–––
–––
–––
11
3.3
1.2
4.0
2.5
5.2
8.9
9.7
40
12
4.5
1360
630
240
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
5.7 mVGS = 10V, ID = 15A e
9.7 VGS = 4.5V, ID = 12A e
2.2 V VDS = VGS, ID = 250µA
––– mV/°C
1.0
150
100
-100
–––
17
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 12A
––– VDS = 10V
––– nC VGS = 4.5V
––– ID = 12A
––– See Fig. 16
–––
––– nC VDS = 10V, VGS = 0V
––– VDD = 16V, VGS = 4.5V e
––– ID = 12A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 10V
––– ƒ = 1.0MHz
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.81
20
12
Max. Units
Conditions
53 MOSFET symbol
A showing the
D
120 integral reverse
G
p-n junction diode.
S
1.0 V TJ = 25°C, IS = 12A, VGS = 0V e
30 ns TJ = 25°C, IF = 12A
18 nC di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.61mH,
RG = 25, IAS = 12A.
ƒ Pulse width 400µs; duty cycle 2%.
„ Surface mounted on 1 in. square Cu board.
… Used double sided cooling, mounting pad.
† Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‡ TC measured with thermal couple mounted to top (Drain) of
part.
ˆ Rθ is measured at TJ of approximately 90°C.
‰ Click on this section to link to the appropriate technical paper.
Š Click on this section to link to the DirectFET Website.
2 www.irf.com


Part Number IRF6623PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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IRF6623PBF pdf
IRF6623PBF Datasheet PDF
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