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International Rectifier Electronic Components Datasheet

IRF6797MTRPbF Datasheet

HEXFET Power MOSFET plus Schottky Diode

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IRF6797MTRPbF pdf
PD - 97320A
IRF6797MPbF
IRF6797MTRPbF
HEXFET® Power MOSFET plus Schottky Diode ‚
l RoHs Compliant Containing No Lead and Bromide 
l Integrated Monolithic Schottky Diode
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
25V max ±20V max 1.1m@ 10V 1.8m@ 4.5V
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
Qg tot
45nC
Qgd
13nC
Qgs2
6.2nC
Qrr
38nC
Qoss
38nC
Vgs(th)
1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6797MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6797MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25 V
±20
36
29 A
210
300
260 mJ
30 A
4 14.0
3
ID = 36A
12.0 ID= 30A
10.0
VDS= 20V
VDS= 13V
8.0
2
TJ = 125°C
6.0
1
TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
4.0
2.0
0.0
0
20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.57mH, RG = 25, IAS = 30A.
1
03/16/09


International Rectifier Electronic Components Datasheet

IRF6797MTRPbF Datasheet

HEXFET Power MOSFET plus Schottky Diode

No Preview Available !

IRF6797MTRPbF pdf
IRF6797MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
130
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
10
1.1
1.8
1.8
-4.6
–––
–––
–––
–––
–––
45
12
6.2
13
14
19.2
38
1.3
22
32
20
15
5790
1790
720
Typ.
–––
–––
–––
30
38
Max. Units
Conditions
–––
–––
1.4
2.4
2.35
–––
500
5.0
100
-100
–––
V VGS = 0V, ID = 1.0mA
mV/°C Reference to 25°C, ID = 10mA
imVGS = 10V, ID = 38A
iVGS = 4.5V, ID = 30A
V VDS = VGS, ID = 150µA
mV/°C VDS = VGS, ID = 10mA
µA VDS = 20V, VGS = 0V
mA VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 13V, ID = 30A
68
––– VDS = 13V
––– nC VGS = 4.5V
––– ID = 30A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
Ãi2.2
––– VDD = 13V, VGS = 4.5V
––– ns ID = 30A
––– RG = 1.8
––– See Fig. 17
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
36 MOSFET symbol
A showing the
300 integral reverse
0.65
p-n junction diode.
iV TJ = 25°C, IS = 30A, VGS = 0V
i45 ns TJ = 25°C, IF = 30A
57 nC di/dt = 200A/µs
Notes:
‡ Pulse width 400µs; duty cycle 2%.
2
www.irf.com


Part Number IRF6797MTRPbF
Description HEXFET Power MOSFET plus Schottky Diode
Maker International Rectifier
Total Page 9 Pages
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International Rectifier
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