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International Rectifier Electronic Components Datasheet

IRF7322D1PBF Datasheet

FETKY MOSFET / Schottky Diode

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IRF7322D1PBF pdf
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PD - 95298
IRF7322D1PbF
FETKYä MOSFET / Schottky Diode
l Co-packaged HEXFET® Power MOSFET
and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
l Lead-Free
A
A
S
G
1
8K
VDSS = -20V
2 7K
3
6D
RDS(on) = 0.058
4 5 D Schottky Vf = 0.39V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
-5.3
-4.3
-43
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 12
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
SO-8
Units
A
W
mW/°C
V
V/ns
°C
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
62.5
Units
°C/W
Notes:
À Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Á ISD -2.9A, di/dt -77A/µs, VDD V(BR)DSS, TJ 150°C
 Pulse width 300µs; duty cycle 2%
à Surface mounted on FR-4 board, t 10sec.
www.irf.com
1
10/12/04


International Rectifier Electronic Components Datasheet

IRF7322D1PBF Datasheet

FETKY MOSFET / Schottky Diode

No Preview Available !

IRF7322D1PBF pdf
IRF7322D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-20 — —
— 0.049 0.062
— 0.082 0.098
-0.70 — —
— 5.9 —
— — -1.0
— — -25
— — 100
— — -100
— 19 29
— 4.0 6.1
— 7.7 12
— 15 22
— 40 60
— 42 63
— 49 73
— 780 —
— 470 —
— 240 —
V
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
VGS = -4.5V, ID = -2.9A ƒ
VGS = -2.7V, ID = -1.5A ƒ
VDS = VGS, ID = -250µA
VDS = -10V, ID = -1.5A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 55°C
VGS = -12.0V
VGS = 12.0V
ID = -2.9A
VDS = -16V
VGS = -4.5V (see figure 6) Â
VDD = -10V
ID = -2.9A
RG = 6.0
RD = 3.4Â
VGS = 0V
VDS = -15V
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
IS Continuous Source Current (Body Diode) — — -2.5 A
ISM
Pulsed Source Current (Body Diode)
— — -21
VSD Body Diode Forward Voltage
— — -1.2 V
TJ = 25°C, IS = -2.9A, VGS = 0V
trr Reverse Recovery Time (Body Diode) — 47 71 ns TJ = 25°C, IF = -2.9A
Qrr Reverse Recovery Charge
— 49 73 nC di/dt = 100A/µs Â
Schottky Diode Maximum Ratings
Parameter
IF(av) Max. Average Forward Current
ISM Max. peak one cycle Non-repetitive
Surge current
Max. Units.
2.7 A
2
120
11 A
Schottky Diode Electrical Specifications
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Parameter
VFM Max. Forward voltage drop
IRM
Ct
dv/dt
2
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
0.39
V
0.57
0.02 mA
8
92 pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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2


Part Number IRF7322D1PBF
Description FETKY MOSFET / Schottky Diode
Maker International Rectifier
Total Page 8 Pages
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