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International Rectifier Electronic Components Datasheet

IRF9392TRPbF Datasheet

HEXFET Power MOSFET

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IRF9392TRPbF pdf
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30
±25
17.5
-9.8
V
V
m
A
PD - 97571
IRF9392PbF
HEXFET® Power MOSFET
6
6
6
*
'
'
'
'
SO-8
Applications
Adaptor Input Switch for Notebook PC
Features and Benefits
Features
25V VGS max
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Direct Drive at High VGS
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9392PbF
IRF9392TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Notes  through † are on page 2
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Max.
-30
±25
-9.8
-7.8
-80
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
09/30/2010


International Rectifier Electronic Components Datasheet

IRF9392TRPbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF9392TRPbF pdf
IRF9392PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
VGS(th)
Gate Threshold Voltage
-1.3
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
gfs Forward Transconductance
hQg Total Gate Charge
hQg Total Gate Charge
hQgs Gate-to-Source Charge
hQgd Gate-to-Drain Charge
hRG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
Min.
IS Continuous Source Current
(Body Diode)
–––
ISM Pulsed Source Current
Ù(Body Diode)
–––
VSD Diode Forward Voltage
–––
trr Reverse Recovery Time
–––
Qrr Reverse Recovery Charge
Thermal Resistance
–––
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Typ.
–––
0.021
13.6
12.1
-1.9
-5.7
–––
–––
–––
–––
–––
14
27
4.1
6.6
18
15
47
73
58
1270
250
180
Typ.
–––
–––
–––
36
20
Max.
–––
–––
17.5
–––
-2.4
–––
-1.0
-150
-10
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
m
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
eVGS = -10V, ID = -9.8A
eVGS = -20V, ID = -7.8A
V
mV/°C
µA
µA
S
nC
nC
VDS = VGS, ID = -25µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -25V
VGS = 25V
VDS = -10V, ID = -7.8A
VDS = -15V,VGS = -4.5V,ID = -7.8A
VGS = -10V
VDS = -15V
ID = -7.8A
eVDD = -15V, VGS = -4.5V
ns
ID = -1.0A
RG = 6.8
See Figs. 19a & 19b
VGS = 0V
pF VDS = -25V
ƒ = 1.0KHz
Typ.
–––
–––
Max.
102
-7.8
Units
mJ
A
Max.
-2.5
-80
-1.2
54
30
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
D
integral reverse
G
p-n junction diode.
S
eTJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A, VDD = -24V
edi/dt = 100/µs
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 3.3mH, RG = 25, IAS = -7.8A.
ƒ Pulse width 400µs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
2
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Part Number IRF9392TRPbF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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